European Nanoelectronics Network


Five complementary strands are provided by the facility partners. To browse by offerings, follow this link:
Ascent+ Showroom

CEA-Leti | Fraunhofer Mikroelektronik | imec | INL | Tyndall

ASCENT+ serves as the direct entry point to a European Nanoelectronics Research Infrastructure of global scale offering access to key enabling capabilities in state-of-the-art processing, modelling and simulation data sets, metrology and characterisation, and devices and test structures.

ASCENT+ provides access to research infrastructures within key enabling capabilities:

  • Processing
  • Modelling / Databases
  • Metrology / Characterisation
  • Devices / Test structures

giving access and enabling research in the following Platform Technologies:

  • Nano for Quantum Technologies
  • Disruptive Devices
  • Advanced Integration
Enabling Capabilities Platform Technologies
Nano for Quantum Technologies Disruptive Devices Advanced Integration
Processing – Quantum nanostructures (using MOVPE, ALD/E, EBL)
– Diamond growth, 3D shaping and membrane fabrication
– Graphene-based device processing on 200mm wafers
– Sub-nm material deposition
– Flexible Fabrication including e-beam lithography
– Nanowires and 2D materials
– Sequential 3-D
– Graphene-based devices
– Material stacks for memory
– Spintronic devices on 200mm wafers
– GaN on SOI MPW
– 3-D packaging: µBump, Cu pillars, TSV
– Nanophotonics integration
– Ferroelectrics integration
– Chemical functionalisation to integrate novel materials
– Epitaxial growth on SiC
– Novel memories
– Package integration including on advanced Silicon devices
– Flexible fabrication on multiple substrates
Modelling / Databases – Modelling based on group-IV, group-III and group-V materials
– Intrinsic defect modelling
– Nanostructure modelling based on range of materials & alloys
– Compact models for memory materials
– Device models across a range of advanced devices
– Device simulations
– Atomistic calculations for novel devices
– Spintronics modelling
– Thermoelectric modelling
– Ferroelectric doping profiles
– PDK for 200V GaN on SOI
– Electro-thermal modelling
– Electronic transport properties
– CMP modelling algorithms
– Thermal modelling of integrated structures
– Integrated devices design expertise
Metrology / Characterisation – Cryogenic optical measurement
– Unique Low temp (<4K) physical and chemical characterisation – Physical characterisation (SIMS, Atom probe, Xray, extensive microscopy, Raman, etc.) – Magnetic characterisation – Solar simulator – Kelvin probe – Cryo/magnetic electrical test-bed (due in 2020)
– Extensive electrical and Physical characterisation on hundreds of tools including TEM, HR-SEM, AFM, FIB, ion beam, Xray, surface analysis, etc.
– Nanoferroics characterisation
– Picoprober for unconventional probing
– Spintronics device characterisation in a magnetic field
– Advanced EM and spectroscopic imaging
– Defects Characterisation
– RF characterisation
Devices / Test structures – Quantum dots and devices
– Diced chips with option for customised wire bonding
– 14nm FinFET devices
– Advanced node test structures
– Stacked nanowire CMOS on SOI
– 28nm gate length 3D sequential technologies
– Advanced logic and memory (OXRAM, etc)
– Low-dimensional FETs
– Diced chips with various spintronic device arrays
– Devices from process development lines
– Demonstrator circuits
– Hybrid MEMS+ devices Monolithic integration
– 22nm test chips to test new integration concepts
  Nano for Quantum Technologies Disruptive Devices Advanced Integration

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This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreements 871130 and 654384.