Five complementary strands are provided by the facility partners. To browse by offerings, follow this link:
Ascent+ Showroom

CEA-Leti | Fraunhofer Mikroelektronik | imec | INL | Tyndall | Virtual Access

ASCENT provides access to research infrastructures within key enabling capabilities:

  • Processing
  • Modelling / Databases
  • Metrology / Characterisation
  • Devices / Test structures

giving access and enabling research in the following Platform Technologies:

  • Nano for Quantum Technologies
  • Disruptive Devices
  • Advanced Integration
Enabling Capabilities Platform Technologies
Nano for Quantum Technologies Disruptive Devices Advanced Integration
Processing – Quantum nanostructures (using MOVPE, ALD/E, EBL)
– Diamond growth, 3D shaping and membrane fabrication
– Graphene-based device processing on 200mm wafers
– Sub-nm material deposition		 – Flexible Fabrication including e-beam lithography
– Nanowires and 2D materials
– Sequential 3-D
– Graphene-based devices
– Material stacks for memory
– Spintronic devices on 200mm wafers		 – GaN on SOI MPW
– 3-D packaging: µBump, Cu pillars, TSV
– Nanophotonics integration
– Ferroelectrics integration
– Chemical functionalisation to integrate novel materials
– Epitaxial growth on SiC
– Novel memories
– Package integration including on advanced Silicon devices
– Flexible fabrication on multiple substrates
Modelling / Databases – Modelling based on group-IV, group-III and group-V materials
– Intrinsic defect modelling
– Nanostructure modelling based on range of materials & alloys		 – Compact models for memory materials
– Device models across a range of advanced devices
– Device simulations
– Atomistic calculations for novel devices
– Spintronics modelling
– Thermoelectric modelling
– Ferroelectric doping profiles		 – PDK for 200V GaN on SOI
– Electro-thermal modelling
– Electronic transport properties
– CMP modelling algorithms
– Thermal modelling of integrated structures
– Integrated devices design expertise
Metrology / Characterisation – Cryogenic optical measurement
– Unique Low temp (<4K) physical and chemical characterisation – Physical characterisation (SIMS, Atom probe, Xray, extensive microscopy, Raman, etc.) – Magnetic characterisation – Solar simulator – Kelvin probe – Cryo/magnetic electrical test-bed (due in 2020)		 – Extensive electrical and Physical characterisation on hundreds of tools including TEM, HR-SEM, AFM, FIB, ion beam, Xray, surface analysis, etc.
– Nanoferroics characterisation
– Picoprober for unconventional probing
– Spintronics device characterisation in a magnetic field
– Advanced EM and spectroscopic imaging
– Defects Characterisation
– RF characterisation
Devices / Test structures – Quantum dots and devices
– Diced chips with option for customised wire bonding		 – 14nm FinFET devices
– Advanced node test structures
– Stacked nanowire CMOS on SOI
– 28nm gate length 3D sequential technologies
– Advanced logic and memory (OXRAM, etc)
– Low-dimensional FETs
– Diced chips with various spintronic device arrays		 – Devices from process development lines
– Demonstrator circuits
– Hybrid MEMS+ devices Monolithic integration
– 22nm test chips to test new integration concepts
Nano for Quantum Technologies Disruptive Devices Advanced Integration

Facilities

ASCENT provides a European-wide direct access route to sub 10 nm nanoelectronics, ‘Beyond CMOS’ devices, and opens the possibility to develop ‘More than Moore’ capabilities such as nanowire and 2D sensors for research organizations and universities, by capitalising on the globally-leading advanced nanoelectronics platforms made possible through the ASCENT infrastructure consortium.

ASCENT offers trans-national access and virtual access activities, supporting the wider European nanoelectronics research and academic communities by delivering access to:

Facilities
State-of-the-art research infrastructure providing access to nanofabrication, test structures and electrical characterisation equipment
Virtual Access
TCAD models and compact models. Test/characterisation data

Quick links