C. Márquez, F. Gity, J.C. Galdón, A. Martínez, N. Salazar, L. Ansari, H. Neill, L. Donetti, F. Lorenzo, M. Caño-García, R. Ortega, C. Navarro, C. Sampedro, P. Hurley, and F. Gamiz, “On the Enhanced p-Type Performance of Back-Gated WS2 Devices”, Advanced Electronic Materials, 2500079 (Apr 2025)
DOI: 10.1002/aelm.202500079 (Open Access)
ASCENT+ Transnational Access Project 229
Access to Tyndall: nano-fabrication and physical/electrical characterisation
I.N. Demchenko, Y. Syryanyy, A. Shokri, Y. Melikhov, J. Domagala, R. Minikayev, A. Derkachova, F. Munnik, U. Kentsch, M. Zając, A. Reck, N. Haufe, and Z. Galazka, “Local structure modification around Si atoms in Si-implanted monocrystalline β-Ga2O3 (100) under heated substrate conditions”, Acta Materialia, vol. 292, 121036 (Jun 2025)
DOI: 10.1016/j.actamat.2025.121036
ASCENT+ Transnational Access Project 332
Access to Fraunhofer IPMS: Physical Analysis
S. Bugu, S. Biradar, A. Blake, C.W. Liu, M. Myronov, R. Duffy, G. Fagas, and N. Petkov, “High-Fidelity TiN Processing Modes for Multigate Ge-Based Quantum Devices”, ACS Applied Electronic Materials, 2025, 7, 2, pp. 652-9 (Jan 2025)
ASCENT+ Transnational Access Project 277
Access to Tyndall: e-beam lithography, nano-fabrication and physical/electrical characterisation
M. Hayjurst Appel, A. Ghorbal, N. Shofer, L. Zaporski, S. Manna, S.F. Covre da Silva, U. Haeusler, C. Le Gall, A. Rastelli, D. Gangloff, and M. Atatüre, “A many-body quantum register for a spin qubit”, Nature Physics, vol. 21, pp. 368–73 (January 2025)
DOI: 10.1038/s41567-024-02746-z (Open Access)
ASCENT+ Joint Research Activities (JRA)
K. Samperi, U. Chatterjee, E. Decoutere, and S. Pennisi, “Monolithically Integrated Bootstrapped Gate Driver With a 200-V GaN Power Switch”, IEEE Transactions on Circuits and Systems I: Regular Papers, pp. 1-10 (March 2025)
DOI: 10.1109/TCSI.2025.3542714
ASCENT+ Transnational Access Project 335
Access to imec: GaN IC MPW
L. Colavecchi, G. Juska and E. Pelucchi, “Optimizing light extraction from non-planar site-controlled pyramidal quantum dot system: comparative modeling of three fabricable geometries”, Mater. Quantum. Technol., February 2025, vol. 5, iss. 1, pp. 015301.
DOI: 10.1088/2633-4356/adb6ec (Open Access)
ASCENT+ Joint Research Activities (JRA)
I.E. Campbell, A. Gupta, P. Metaxa, A. Arifutzzaman, T. Ma, P. Arellano, R. Duffy, and A.A. Bol, “Di-tert-butyl Disulfide as a Replacement for Hydrogen Sulfide in the Atomic Layer Deposition of Two-Dimensional Molybdenum Disulfide”, Chem. Mater., 2025, vol. 37, iss. 4, pp. 1478–90.
DOI: 10.1021/acs.chemmater.4c02561
(Green Open Access: Cork Open Research Archive – CORA)
ASCENT+ Transnational Access Project 227
Access to Tyndall: nano-fabrication and physical/electrical characterisation
K. Samperi, U. Chatterjee, and S. Pennisi, “60-dB 70-V/µs Three-Stage Op-Amp With Dual Single-Miller Frequency Compensation in GaN-IC Technology”, IEEE Transactions on Circuits and Systems I: Regular Papers, pp. 1-8 (November 2024)
DOI: 10.1109/TCSI.2024.3503071 (Open Access)
ASCENT+ Transnational Access Project 335
Access to imec: GaN IC MPW
S. Bose, R. Jesma, K.S. Sharma, and G. Pillai, “Design and Realization of a Fully Differential SAW Filter Architecture for Bandwidth Enhancement”, 2024 IEEE Ultrasonics, Ferroelectrics, and Frequency Control Joint Symposium (UFFC-JS), Taipei, Taiwan, 22-26 September 2024
DOI: 10.1109/UFFC-JS60046.2024.10793966
ASCENT+ Transnational Access Project 369
Access to Tyndall: PiezoMEMS
K. Intonti, A. Pelella, H. Neill, V. Patil, P.K. Hurley, L. Ansari, F. Gity, and A. Di Bartolomeo, “ReS2/Si 2D/3D vertical heterojunction as a self-powered photodiode”, Applied Physics Letters, vol. 125, iss. 17, 173505 (October 2024)
DOI: 10.1063/5.0231243
(Green Open Access: Cork Open Research Archive – CORA)
ASCENT+ Transnational Access Project 377
Access to Tyndall: Nanofabrication on 2D materials
B. Al Chimali, I. Carrasco, T. Defforge, R. Dailleau, L. Monnier, K. Baishya, J.M. Macak, G. Gautier and B. Le Borgne, “Road for macroporous silicon stabilization by ultrathin ALD TiO2 coating”, Materials Advances, 2024, 5, pp. 9270-8 (October 2024)
DOI: 10.1039/D4MA00654B (Open Access)
ASCENT+ Transnational Access Project 406
Access to Tyndall: Focused Ion Beam (FIB) and Transmission Electron Microscopy (TEM)
A. Yukhymchuk, D. Zhukova, N. Prybora, N. Stolyarchuk, O. Bondarchuk, H.B. Yankovych, and I.V. Melnyk, “Waste-to-Wealth: Unlocking the Potential of Pine Sawdust Biochar for Adsorption of Cobalt(II) and Nickel(II) Ions and Sustainable Elimination of Carbamazepine from Aqueous Solutions”, ACS ES&T Water, vol. 4, iss. 9, pp. 3943–55 (August 2024)
DOI: 10.1021/acsestwater.4c00241
ASCENT+ Transnational Access Project 376
Access to INL: X-ray photoelectron spectroscopy (XPS)
G. Paulo, L. Bartolomé, O. Bondarchuk, S. Meloni, Y. Grosu, and A. Giacomello, “Partial Water Intrusion and Extrusion in Hydrophobic Nanopores for Thermomechanical Energy Dissipation”, The Journal of Physical Chemistry C: Energy Conversion and Storage, vol. 128, iss. 29, pp. 12036-45 (July 2024)
DOI: 10.1021/acs.jpcc.4c02900 (Open Access)
ASCENT+ Transnational Access Project 333
Access to INL: X-ray photoelectron spectroscopy (XPS)
G. Fagas, C. Ó Murchú, K. Rogdakis, E. Kymakis, E. Fortunato, and R. Martins, “The INFRACHIP European research infrastructure for emerging and responsible electronics”, Nature Reviews Electrical Engineering (Comment), vol. 1, pp. 354-5 (June 2024)
DOI: 10.1038/s44287-024-00064-3
M. Alaei, M. Borga, E. Fabris, S. Decouture, J. Lauwaert, and B. Bakeroot, “Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping”, IEEE Trans. Electron Devices, vol. 71, iss. 10, pp. 5949-55 (October 2024)
DOI: 10.1109/TED.2024.3446488 (Open Access)
ASCENT+ Joint Research Activities (JRA)
M.B. Rota, T.M. Krieger, Q. Buchinger, M. Beccaceci, J. Neuwirth, H. Huet, N. Horová, G. Lovicu, G. Ronco, S.F. Covre da Silva, G. Pettinari, M. Moczała-Dusanowska, C. Kohlberger, S. Manna, S. Stroj, J. Freund, X. Yuan, C. Schneider, M. Ježek, S. Höfling, F. Basso Basset, T. Huber-Loyola, A. Rastelli, and R. Trotta, “A source of entangled photons based on a cavity-enhanced and strain-tuned GaAs quantum dot”, eLight, vol. 4, Article 13 (July 2024)
DOI: 10.1186/s43593-024-00072-8 (Open Access)
ASCENT+ Joint Research Activities (JRA)
H.E. Dyte, G. Gillard, S. Manna, S.F. Covre da Silva, A. Rastelli, and E.A. Chekhovich, “Is Wave Function Collapse Necessary? Explaining Quantum Nondemolition Measurement of a Spin Qubit within Linear Evolution”, Physical Review Letters, vol. 132, 160804 (April 2024)
DOI: 10.1103/PhysRevLett.132.160804 (Open Access)
ASCENT+ Joint Research Activities (JRA)
B. Hailegnaw, S. Demchyshyn, C. Putz, L.E. Lehner, F. Mayr, D. Schiller, R. Pruckner, M. Cobet, D. Ziss, T.M. Krieger, A. Rastelli, N.S. Sariciftci, M.C. Scharber, and M. Kaltenbrunner, “Flexible quasi-2D perovskite solar cells with high specific power and improved stability for energy-autonomous drones”, Nature Energy, vol. 9, pp. 677-90 (April 2024)
DOI: 10.1038/s41560-024-01500-2
ASCENT+ Joint Research Activities (JRA)
G. Peniakov, Q. Buchinger, M. Helal, S. Betzold, Y. Reum, M.B. Rota, G. Ronco, M. Beccaceci, T.M. Krieger, S.F. Covre da Silva, A. Rastelli, R. Trotta, A. Pfenning, S. Höfling, and T. Huber-Loyola, “Polarized and Unpolarized Emission from a Single Emitter in a Bullseye Resonator”, Laser and Photonics Reviews, vol. 18, iss. 4 (April 2024)
DOI: 10.1002/lpor.202300835 (Open Access)
ASCENT+ Joint Research Activities (JRA)
P. Millington-Hotze, H.E. Dyte, S. Manna, S.F. Covre da Silva, A. Rastelli, and E.A. Chekhovich, “Approaching a fully-polarized state of nuclear spins in a solid”, Nature Communications, vol. 15, Article 985 (February 2024)
DOI: 10.1038/s41467-024-45364-2 (Open Access)
ASCENT+ Joint Research Activities (JRA)
F. Hornung, U. Pfister, S. Bauer, D.R. Cyrlyson’s, D. Wang, P. Vijayan, A.J. Garcia Jr, S.F. Covre da Silva, M. Jetter, S.L. Portalupi, A. Rastelli, and P. Milcher, “Highly Indistinguishable Single Photons from Droplet-Etched GaAs Quantum Dots Integrated in Single-Mode Waveguides and Beamsplitters”, Nano Letters, vol. 24, iss. 4, pp. 1184–90 (January 2024)
DOI: 10.1021/acs.nanolett.3c04010
(Green Open Access: DOI: 10.48550/arXiv.2310.11899)
ASCENT+ Joint Research Activities (JRA)
Y. Karli, D.A. Vajner, F. Kappe, P.C.A. Hagen, L.M. Hansen, R. Schwarz, T.K. Bracht, C. Schimpf, S.F. Covre da Silva, P. Walther, A. Rastelli, V.M. Axt, J.C. Loredo, V. Remesh, T. Heindel, D.E. Reiter, and G. Weihs, “Controlling the photon number coherence of solid-state quantum light sources for quantum cryptography”, npj Quantum Information, vol. 10, Article 17 (January 2024)
DOI: 10.1038/s41534-024-00811-2 (Open Access)
ASCENT+ Joint Research Activities (JRA)
T.M. Krieger, C. Weidinger, T. Oberleitner, G. Undeutsch, M.B. Rota, N. Tajik, M. Aigner, Q. Buchinger, C. Schimpf, A.J. Garcia Jr, S.F. Covre da Silva, S. Höfling, T. Huber-Loyola, R. Trotta, and A. Rastelli, “Postfabrication Tuning of Circular Bragg Resonators for Enhanced Emitter-Cavity Coupling”, ACS Photonics 2024, vol. 11, iss. 2, pp. 596–603, (January 2024)
DOI: 10.1021/acsphotonics.3c01480 (Open Access)
ASCENT+ Joint Research Activities (JRA)
F. Basso Basset, M.B. Rota, M. Beccaceci, T.M. Krieger, Q. Buchinger, J. Neuwirth, H. Huet, S. Stroj, S.F. Covre da Silva, G. Ronco, C. Schimpf, S. Höfling, T. Huber-Loyola, A. Rastelli, and R. Trotta, “Signatures of the Optical Stark Effect on Entangled Photon Pairs from Resonantly Pumped Quantum Dots”, Phys. Rev. Lett., vol. 131, 166901 (October 2023)
DOI: 10.1103/PhysRevLett.131.166901 (Open Access)
ASCENT+ Joint Research Activities (JRA)
T. Heindel, J.H. Kim, N. Gregersen, A. Rastelli, and S. Reitzenstein, “Quantum dots for photonic quantum information technology”, Advances in Optics and Photonics, vol. 15, iss. 3, pp. 613-738, 2023
DOI: 10.1364/AOP.490091
(Green Open Access: DOI: 10.48550/arXiv.2309.04229)
ASCENT+ Joint Research Activities (JRA)
G. Gomes, M.L.F. Gomes, S.F. Covre da Silva, A. Garcia Jr, A. Rastelli, O.D.D. Couto Jr, A. Malachias, and C. Deneke, “Review: using rolled-up tubes for strain-tuning the optical properties of quantum emitters”, Nanotechnology, vol. 34, 412001, 2023
ASCENT+ Joint Research Activities (JRA)
M. Alaei, M. Borga, E. Fabris, S. Decouture, J. Lauwaert, and B. Bakeroot, “Modeling Gate Leakage Current for p-GaN Gate HEMTs with Engineered Doping Profile”, IEEE Trans. Electron Devices, vol. 71, iss. 8, pp. 4563-9, 2024
DOI: 10.1109/TED.2024.3418292 (Open Access)
ASCENT+ Joint Research Activities (JRA)
K. Rogdakis, G. Psaltakis, G. Fagas, A. Quinn, R. Martins, and E. Kymakis, “Hybrid chips to enable a sustainable internet of things technology: opportunities and challenges”, Discover Materials, Vol. 4, Art. 4 (Feb 2024)
DOI: 10.1007/s43939-024-00074-w (Open Access)
T.W. Surta, L. Keeney, A.M. Manjón-Sanz, C. Crawford, A. Morscher, L.M. Daniels, J.B. Claridge, A.J. Bell, J. Alaria, and M.J. Rosseinsky, “Separation of K+ and Bi3+ displacements in a Pb-free, monoclinic piezoelectric at the morphotropic phase boundary”, Acta Materialia, vol. 265, 119594 (Feb 2024)
DOI: 10.1016/j.actamat.2023.119594 (Open Access)
ASCENT+ Transnational Access Project 296
Access to Tyndall: Piezoresponse force microscopy (PFM)
M. Rueß, D. Koch, and I. Kallfass, “Multi-MHz Auto-Resonant Power Oscillator in a 650 V GaN-on-SOI Technology for Compact Wireless Power Transfer Systems”, 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), Charlotte (NC), USA, 2023
DOI: 10.1109/WiPDA58524.2023.10382227
ASCENT+ Transnational Access Project 254
Access to imec: GaN IC MPW
V. Remesh, R.G. Krämer, R. Schwarz, F. Kappe, Y. Karli, M.P. Siems, T.K. Bracht, S.F. Covre da Silva, A. Rastelli, D.E. Reiter, D. Richter, S. Nolte, and G. Weihs, “Compact chirped fiber Bragg gratings for single-photon generation from quantum dots”, APL Photonics, 8, 101301 (Oct 2023)
DOI: 10.1063/5.0164222 (Open Access)
ASCENT+ Joint Research Activities (JRA)
M. Vatalaro, H. Neill, F. Gity, P. Magnone, V. Maccaronio, C. Márquez, J.C. Galdón, F. Gamiz, F. Crupi, P. Hurley, and R. De Rose, “Experimental analysis of variability in WS2-based devices for hardware security”, Solid-State Electronics, Vol 207, 108701 (Sep 2023)
DOI: 10.1016/j.sse.2023.108701 (Open Access)
(Green Open Access: DOI: 10.48550/arXiv.2308.02265)
ASCENT+ Transnational Access Project 267
Access to Tyndall: nano-fabrication and physical/electrical characterisation
U. Chatterjee, H. De Pauw, O. Syshchyk, T. Cosnier, A. Vohra, and S. Decoutere, “A fully integrated half-bridge driver circuit in All-GaN GAN-IC technology”, Solid-State Electronics, Vol 207, 108707 (Sep 2023)
DOI: 10.1016/j.sse.2023.108707
ASCENT+ Joint Research Activities (JRA)
C. Schimpf, F. Basso Basset, M. Aigner, W. Attenender, L. Ginés, G. Undeutsch, M. Reindl, D. Huber, D. Gangloff, E.A. Chekhovich, C. Schneider, C. Höfling, A. Predojević, R. Trotta, and A. Rastelli, “Hyperfine interaction limits polarization entanglement of photons from semiconductor quantum dots”, Physics Review B, 108, L081405 (Aug 2023)
DOI: 10.1103/PhysRevB.108.L081405 (Open Access)
ASCENT+ Joint Research Activities (JRA)
N. Petkov, M. Georgieva, S. Bugu, R. Duffy, B. McCarthy, M. Myronov, A.M. Kelleher, G. Maxwell, and G. Fagas, “Electron beam lithography and dimensional metrology for fin and nanowire devices on Ge, SiGe and GeOI substrates”, Microelectronic Engineering, Vol 280, 112071 (Aug 2023)
DOI: 10.1016/j.mee.2023.112071 (Open Access)
ASCENT+ Transnational Access Project 277
Access to Tyndall: e-beam lithography, nano-fabrication and physical/electrical characterisation
E. Coleman, S. Monaghan, F. Gity, G. Mirabelli, R. Duffy, B. Sheehan, S. Balasubramanyam, A.A. Bol, and P. Hurley, “Scrutinizing pre- and post-device fabrication properties of atomic layer deposition WS2 thin films”, Applied Physics Letters, 123, 011901 (2023)
DOI: 10.1063/5.0151592 (Open Access)
ASCENT+ Transnational Access Project 227
Access to Tyndall: nano-fabrication and physical/electrical characterisation
F. Kappe, Y. Karli, T.K. Bracht, S.F. Covre da Silva, T. Seidelmann, V.M. Axt, A. Rastelli, G. Weihs, D.E. Reiter, and V. Remesh, “Collective excitation of spatio-spectrally distinct quantum dots enabled by chirped pulses”, Materials for Quantum Technologies, 3, 025006 (2023)
DOI: 10.1088/2633-4356/acd7c1 (Open Access)
DOI: 10.5281/zenodo.7903368 (Open Data Access)
ASCENT+ Joint Research Activities (JRA)
T. Seidelmann, T.K. Bracht, B.U. Lehner, C. Schimpf, M. Cosacchi, M. Cygorek, A. Vagov, A. Rastelli, D.E. Reiter, and V.M. Axt, “Two-photon excitation with finite pulses unlocks pure dephasing-induced degradation of entangled photons emitted by quantum dots”, Physics Review B, 107, 235304 (22 Jun 2023)
DOI: 10.1103/PhysRevB.107.235304
(Green Open Access: DOI: 10.48550/arXiv.2301.10820)
ASCENT+ Joint Research Activities (JRA)
X. Yuan, S.F. Covre da Silva, D. Csontosová, H. Huang, C. Schimpf, M. Reindl, J. Lu, Z. Ni, A. Rastelli, and P. Klenovský, “GaAs quantum dots under quasiuniaxial stress: Experiment and theory”, Physics Review B, 107, 235412 (14 Jun 2023)
DOI: 10.1103/PhysRevB.107.235412 (Open Access)
DOI: 10.5281/zenodo.7748664 (Open Data Access)
ASCENT+ Joint Research Activities (JRA)
A. Tonon, E. Di Russo, F. Sgarbossa, L. Bacci, N. Argiolas, C. Scian, Y.P. Ivanov, G. Divitini, B. Sheehan, D. De Salvador, A. Gasparotto, V. Morandi, R. Duffy, and E. Napolitani, “Laser induced crystallization of sputtered MoS2 thin films”, Materials Science in Semiconductor Processing, 2023, 164, 107616
DOI: 10.1016/j.mssp.2023.107616 (Open Access)
(Green Open Access: Univ. Padova repository)
ASCENT+ Joint Research Activities (JRA)
P. Millington-Hotze, S. Manna, S.F. Covre da Silva, A. Rastelli, and E.A. Chekhovich, “Nuclear spin diffusion in the central spin system of a GaAs/AlGaAs quantum dot”, nature communications, 14, 2677 (2023)
DOI: 10.1038/s41467-023-38349-0 (Open Access)
ASCENT+ Joint Research Activities (JRA)
E. Di Russo, A. Tonon, A. Mischianti, F. Sgarbossa, E. Coleman, F. Gity, L. Panarella, B. Sheehan, V.A. Lebedev, D. De Salvador, R. Duffy, and E. Napolitani, “Synthesis of Large-Area Crystalline MoS2 by Sputter Deposition and Pulsed Laser Annealing”, ACS Appl. Electron. Mater., 2023, 5, 5, pp. 2862-75
DOI: 10.1021/acsaelm.3c00362
(Green Open Access: Univ. Padova repository)
ASCENT+ Joint Research Activities (JRA)
B.U. Lehner, T. Seidelmann, G. Undeutsch, C. Schimpf, S. Manna, M. Gawełczyk, S.F. Covre da Silva, X. Yuan, S. Stroj, D.E. Reiter, V.M. Axt, and A. Rastelli, “Beyond the Four-Level Model: Dark and Hot States in Quantum Dots Degrade Photonic Entanglement”, Nano Letters, 2023, 23, 4, pp. 1409–15 (February 6, 2023)
DOI: 10.1021/acs.nanolett.2c04734 (Open Access)
DOI: 10.5281/zenodo.7611998 (Open Data Access)
ASCENT+ Joint Research Activities (JRA)
L. Zaporski, N. Shofer, J.H. Bodey, S. Manna, G. Gillard, M. Hayjurst Appel C. Schimpf, S.F. Covre da Silva, J. Jarman, G. Delamare, G. Park, U. Haeusler, E.A. Chekhovich, A. Rastelli, D. Gangloff, M. Atatüre, and C. Le Gall, “Ideal refocusing of an optically active spin qubit under strong hyperfine interactions”, Nature Nanotechnology, vol. 18, pp. 257-63 (2023)
DOI: 10.1038/s41565-022-01282-2
ASCENT+ Joint Research Activities (JRA)
F. Basso Basset, M. Valeri, J. Neuwirth, E. Polino, M.B. Rota, D. Poderini, C. Pardo, G. Rodari, E. Roccia, S.F. Covre da Silva, G. Ronco, N. Spagnolo, A. Rastelli, G. Carvacho, F. Sciarrino, and R. Trotta, “Daylight entanglement-based quantum key distribution with a quantum dot source”, Quantum Sci. Technol., 8, 025002 (2023)
DOI: 10.1088/2058-9565/acae3d (Open Access)
ASCENT+ Joint Research Activities (JRA)
S. Choi, D.G. Park, M.J. Kim, S. Bang, J. Kim, S. Jin, K.S. Huh, D. Kim, S. Kim, I. Yoon, J. Mitard, C.E. Han, and J.W. Lee, “Automatic prediction of MOSFETs threshold voltage by machine learning algorithms”, 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2023, (7-10 March 2023)
DOI: 10.1109/EDTM55494.2023.10103059
S. Choi, D.G. Park, M.J. Kim, S. Bang, J. Kim, S. Jin, K.S. Huh, D. Kim, J. Mitard, C.E. Han, and J.W. Lee, “Automatic Prediction of Metal–Oxide–Semiconductor Field-Effect Transistor Threshold Voltage Using Machine Learning Algorithm”, Advanced Intelligent Systems, 5 (1), 2200302 (January 2023)
DOI: 10.1002/aisy.202200302 (Open Access)
T. Seidelmann, C. Schimpf, T.K. Bracht, M. Cosacchi, A. Vagov, A. Rastelli, D.E. Reiter, and V.M. Axt, “Two-Photon Excitation Sets Limit to Entangled Photon Pair Generation from Quantum Emitters”, Phys. Rev. Lett., 129, 193604 (November 4, 2022)
DOI: 10.1103/PhysRevLett.129.193604
(Green Open Access: DOI: 10.48550/arXiv.2205.03390)
ASCENT+ Joint Research Activities (JRA)
G. Carvacho, E. Roccia, M. Valeri, F. Basso Basset, D. Poderini, C. Pardo, E. Polino, L. Carosini, M.B. Rota, J. Neuwirth, S.F. Covre da Silva, A. Rastelli, N. Spagnolo, R. Chaves, R. Trotta, and F. Sciarrino, “Quantum violation of local causality in an urban network using hybrid photonic technologies”, Optica, 9, 5, pp. 572-8 (2022)
DOI: 10.1364/OPTICA.451523 (Open Access)
ASCENT+ Joint Research Activities (JRA)
J. Münzberg, F. Draxl, S.F. Covre da Silva, Y. Karli, S. Manna, A. Rastelli, G. Weihs, and R. Keil, “Fast and efficient demultiplexing of single photons from a quantum dot with resonantly enhanced electro-optic modulators”, APL Photonics, 7, 070802 (2022)
DOI: 10.1063/5.0091867 (Open Access)
DOI: 10.5281/zenodo.6337697 (Open Data Access)
ASCENT+ Joint Research Activities (JRA)
M. Mattinen, F. Gity, E. Coleman, J.F.A. Vonk, M.A. Verheijen, R. Duffy, W.M.M. Kessels, and A.A. Bol, “Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100°C through Control of Plasma Chemistry”, Chem. Mater., 2022, 34, 16, pp. 7280–92.
DOI: 10.1021/acs.chemmater.2c01154 (Open Access)
ASCENT+ Transnational Access Project 227
Access to Tyndall: nano-fabrication and physical/electrical characterisation
C. Schimpf, S. Manna, S.F. Covre da Silva, M. Aigner, and A. Rastelli, “Entanglement-based quantum key distribution with a blinking-free quantum dot operated at a temperature up to 20 K”, Advanced Photonics, 3(6), 065001 (2021)
DOI: 10.1117/1.AP.3.6.065001 (Open Access)
ASCENT+ Joint Research Activities (JRA)
E. Pelucchi, G. Fagas, I. Aharonovich, D. Englund, E. Figueroa, Q. Gong, H. Hannes, J. Liu, C.Y. Lu, N. Masuda, J.W. Pan, F. Schreck, F. Sciarrino, C. Silberhorn, J. Wang, and K.D. Jöns, “The potential and global outlook of integrated photonics for quantum technologies”, Nature Review Physics, 2021
DOI: 10.1038/s42254-021-00398-z
(Green Open Access)
ASCENT+ Joint Research Activities (JRA)
H. Huang, S. Manna, C. Schimpf, M. Reindl, X. Yuan, Y. Zhang, S.F. Covre da Silva, and A. Rastelli, “Bright Single Photon Emission from Quantum Dots Embedded in a Broadband Planar Optical Antenna”, Advanced Optical Materials, 2021, 9, 2001490
DOI: 10.1002/adom.202001490 (Open Access)
ASCENT+ Joint Research Activities (JRA)
E. Coleman, G. Mirabelli, P. Bolshakov, P. Zhao, E. Caruso, F. Gity, S. Monaghan, K. Cherkaoui, V. Balestra, R.M. Wallace, C.D. Young, R. Duffy, and P.K. Hurley, “Investigating interface states and oxide traps in the MoS2/oxide/Si system”, Solid-State Electronics, 186, 108123 (Dec 2021)
DOI: 10.1016/j.sse.2021.108123 (Open Access)
ASCENT Joint Research Activities (JRA)
S.F. Covre da Silva, G. Undeutsch, B. Lehner, S. Manna, T.M. Krieger, M. Reindl, C. Schimpf, R. Trotta, and A. Rastelli, “GaAs quantum dots grown by droplet etching epitaxy as quantum light sources”, Appl. Phys. Lett., 119, 120502 (2021)
DOI: 10.1063/5.0057070 (Open Access)
ASCENT Joint Research Activities (JRA)
H. Huang, D. Csontosová, S. Manna, Y. Huo, R. Trotta, A. Rastelli, and P. Klenovský, “Electric field induced tuning of electronic correlation in weakly confining quantum dots”, Phys. Rev. B, 104, 165401 (2021)
DOI: 10.1103/PhysRevB.104.165401 (Open Access)
ASCENT Joint Research Activities (JRA)
C. Schimpf, M. Reindl, F. Basso Basset, K.D. Jöns, R. Trotta, and A. Rastelli, “Quantum dots as potential sources of strongly entangled photons: Perspectives and challenges for applications in quantum networks”, Appl. Phys. Lett., 118, 100502 (2021)
DOI: 10.1063/5.0038729 (Open Access)
ASCENT Joint Research Activities (JRA)
C. Marquez, N. Salazar, F. Gity, C. Navarro, G. Mirabelli, J.C. Galdon, R. Duffy, S. Navarro, P.K. Hurley and F. Gamiz, “Investigating the transient response of Schottky barrier back-gated MoS2 transistors”, 2D Materials, vol 7, no 2, 025040
ASCENT Transnational Access Project 067
Access to Tyndall: fabrication and physical/electrical characterisation
C. Marquez, N. Salazar, F. Gity, J.C. Galdon, C. Navarro, C. Sampedro, P.K. Hurley, E.Y. Chang and F. Gamiz, “Hysteresis in As-Synthesized MoS2 Transistors: Origin and Sensing Perspectives”, Micromachines 2021, 12 (6), 646
DOI: 10.3390/mi12060646 (Open Access)
ASCENT Transnational Access Project 067
Access to Tyndall: fabrication and physical/electrical characterisation
Y. Takeuchi, A. Violas, T. Fujita, Y. Kumamoto, M Modreanu, T. Tanaka, K. Fujita and N. Takeyasu, “Hot Carrier Generation in Two-Dimensional Silver Nanoparticle Arrays at Different Excitation Wavelengths under On-Resonant Conditions”, Journal of Physical Chemistry.
ASCENT Project RefNo 055
Access to Tyndall HR-TEM physical and optical characterisation.
G. Deligeorgis, V. Kampylafka, A. Kostopoulos, M. Modreanu, M. Schmidt, E. Gagaoudakis, K. Tsagaraki, V. Kontomitrou, G. Konstantinidis, G. Kiriakidis and E. Aperathitis, “Sputtered ZnO Nanostructure Homojunctions Fabricated on Room Temperature Pre-patterned Substrates”, 45th International Conference on Micro-Nano Engineering 2019, 16-20 September 2019, Rhodes, Greece.
ASCENT Project RefNo 046
Access to Tyndall HR-TEM physical characterisation.
M.S. Bhoir, T. Chiarella, L.Å. Ragnarsson, J. Mitard, V. Terzeiva, N. Horiguchi and N.R. Mohapatra, “Variability sources in nanoscale bulk FinFETs and TiTaN- a promising low variability WFM for 7/5nm CMOS nodes”, IEDM 2019 Proceedings, San Francisco (USA) 7-11 Dec 2019 (to be published)
ASCENT Project RefNo 113
Access to imec finFET test chips and characterisation facilities
V. Kampylafka, A. Kostopoulos, M. Modreanu, M. Schmidt, E. Gagaoudakis, K. Tsagaraki, V. Kontomitrou, G. Konstantinidis, G. Deligeorgis, G. Kiriakidis and E. Aperathitis, “Long-term stability of transparent n/p ZnO homojunctions grown by RF-sputtering at room-temperature”, Journal of Materiomics (2019) (in press)
DOI: 10.1016/j.jmat.2019.02.006
ASCENT Project RefNo 046
Access to Tyndall HR-TEM physical characterisation.
B. Yi, G.S. Yang, S. Barraud, L. Brevard, J.W. Lee and J.W. Yang, “Physics based Compact Model of Low-Frequency Noise for Gate-All-Around MOSFETs”, 26th Korean Conference on Semiconductors – 13-15 Feb 2019, Gangwon-do
ASCENT Project RefNo 087
Access to CEA-Leti 300mm wafer with nanowires of geometries down to ∼10nm.
G.S. Yang, D.H. Kim, D.G. Park, S.H. Kim, J.C. Kim, S. Barraud, L. Brevard and J.W. Lee “Low Frequency Noise Variability Analysis Depending on Epi-Source/Drain in GAA (Gate-All-Around) FET”, 26th Korean Conference on Semiconductors – 13-15 Feb 2019, Gangwon-do
ASCENT Project RefNo 087
Access to CEA-Leti 300mm wafer with nanowires of geometries down to ∼10nm.
M.S. Bhoir, T. Chiarella, L.Å. Ragnarsson, J. Mitard, V. Terzeiva, N. Horiguchi and N.R. Mohapatra, “Analog Performance and its Variability in Sub-10nm Fin-width FinFETs: A Detailed Analysis”, IEEE Journal of the Electron Devices Society.
DOI: 10.1109/JEDS.2019.2934575
ASCENT Project RefNo 113
Access to imec finFET test chips and characterisation facilities
J. MacHale, F. Meaney, N. Kennedy, L. Eaton, G. Mirabelli, M. White, K. Thomas, E. Pelucchi, D.H. Petersen, R. Lin, N. Petkov, J. Connolly, C. Hatem, F. Gity, L. Ansari, B. Long and R. Duffy, “Exploring Conductivity in ex-situ Doped Si Thin Films as Thickness Approaches 5 nm”, Journal of Applied Physics 125, 225709 (2019)
DOI: 10.1063/1.5098307
ASCENT Joint Research Activities (JRA)
M.S. Bhoir, N.R. Mohapatra, T. Chiarella, L.Å. Ragnarsson, J. Mitard, V. Terzeiva and N. Horiguchi, “Effect of Sub-10nm Fin-widths on the Analog Performance of FinFETs”, 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, Singapore, 2019, pp. 7-9
DOI: 10.1109/EDTM.2019.8731200
ASCENT Project RefNo 113
Access to imec finFET test chips and characterisation facilities
J. Muñoz-Gorriz , D. Blachier, G. Reimbold, F. Campabadal, J. Suñé, S. Monaghan, K. Cherkaoui, P. K. Hurley, and E. Miranda, “Assessing the Correlation Between Location and Size of Catastrophic Breakdown Events in High-K MIM Capacitors”, Trans. on Device and Materials Reliability, vol. 19, no. 2, June 2019, pp. 452-60
DOI: 10.1109/TDMR.2019.2917138
ASCENT Project RefNo 134
Access to CEA-Leti infra-red characterisation
A. Mazurak, J. Jasiński, B. Majkusiak, “Effect of traps-to-gate tunnel communication on C-V characteristics of MIS capacitors”, Microelectronic Engineering, 215 (2019), pp. 111011.1-5
DOI: 10.1016/j.mee.2019.111011
ASCENT Project RefNo 130
Access to CEA-Leti test chips and characterisation
A. Mazurak, J. Jasiński, B. Majkusiak, “Determination of border/bulk traps parameters based on (C-G-V) admittance
measurements”, Journal of Vacuum Science & Technology B 37, 032904 (2019), pp. 032904.1-9
DOI: 10.1116/1.5060674
ASCENT Project RefNo 130
Access to CEA-Leti test chips and characterisation
Yu.V. Gomeniuk, P.N. Okholin, T.E.Rudenko, Yu.Yu. Gomeniuk, T.M. Nazarova, V. Djara, K. Cherkaoui, P.K. Hurley, A.N. Nazarov, “RF Plasma Treatment of Junctionless Pd-Al2O3-InGaAs MISFETs”, VIII Ukrainian scientific conference on physics of semiconductors (USCPS-8), October 2-4, 2018, Uzhgorod (Ukraine)
ASCENT Project RefNo 059
Access to Tyndall
S. Iadanza, A. Tedesco, G. Giannino, M. Grande, L. Ó Faolain, “Silicon nitride 1D-photonic crystal cavity for optical sensing in the near-infrared spectrum in air and liquid”, Photonics Ireland 2018, 3-5 September 2018, Cork (Ireland)
ASCENT Project RefNo 077
Access to Tyndall
A. Pajkanovic; G. Stojanovic, “Temperature Performance of Meander-Type Inductor in Silicon Technology”,
Proc. 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD2018), 2-5 July 2018, Prague (Czech Republic), pp. 193-6
DOI: 10.1109/SMACD.2018.8434918
ASCENT Project RefNo 100
Access to Tyndall
S. Iadanza, A. Bakoz, D. Panettieri, A. Tedesco, G. Giannino, M. Grande, L. Ó Faolain, “Thermally stable external cavity laser based on silicon nitride periodic nanostructures” (Invited Paper), Proc. 20th International Conference on Transparent Optical Networks (ICTON2018), 1-5 July 2018, Bucharest (Romania)
DOI: 10.1109/ICTON.2018.8473622
ASCENT Project RefNo 077
Access to Tyndall
M. Aldrigo, M. Dragoman, M. Modreanu, I. Povey, S. Iordanescu, D. Vasilache, A. Dinescu, M. Shanawani, D. Masotti, “Harvesting Electromagnetic Energy in the V-Band Using a Rectenna Formed by a Bow Tie Integrated with a 6nm-Thick Au/HfO2/Pt Metal-Insulator-Metal Diode”, IEEE Trans. on Electron Devices, Vol. 65, No. 7, pp. 2973-80 (July 2018)
DOI: 10.1109/TED.2018.2835138
ASCENT Project RefNo 081
Access to Tyndall
Pajkanovic, Aleksander, “Design and Characterisation of an Inductor and a Low-Noise Amplifier in Monolithic Integrated Circuit Technology for Wideband Operation”, PhD thesis, Faculty of Technical Sciences, Univ. of Novi Sad.
Univ Novi Sad Repository [in Serbian] (Open Access)
ASCENT Project RefNo 100
Access to Tyndall
A. Nazarov, Y. Gomeniuk, Y. Gomeniuk, P. Okholin, T. Nazarova, V. Djara, K. Cherkaoui, P. Hurley, “Low-Temperature RF Plasma Treatment Effect on Junctionless Pd-Al2O3-InGaAs MISFET Operation”,
233rd ECS Meeting in Seattle (WA, USA) (May 13-17, 2018), Symposium H02: Advanced CMOS-Compatible Semiconductor Devices 18
ECS Transaction “Advanced CMOS-Compatible Semiconductor Devices 18”, v.85, n.8, pp. 137-42 (2018)
DOI: 10.1149/08508.0137ecst
ASCENT Project RefNo 059
Access to Tyndall
M. van Druenen; G. Collins; C. Glynn; C. O’Dwyer and J.D. Holmes, “Functionalization of SiO2 Surfaces for Si Monolayer Doping with Minimal Carbon Contamination”, ACS Appl. Mater. Interfaces, 2018, 10 (2), pp. 2191–201
DOI: 10.1021/acsami.7b16950
ASCENT Project RefNo 070
Access to CEA-Leti
Yu.V. Gomeniuk, Yu.Yu. Gomeniuk, P.N. Okholin, T.M. Nazarova, K. Cherkaoui, P.K. Hurley and A.N. Nazarov, “Low-temperature RF plasma treatment of junctionless Pd-Al2O3-InGaAs MISFETs”, Promising Trends of Modern Electronics, Informational and Computer systems (MEICS-2017), November 22-24, 2017, Dnipro (Ukraine), pp. 205-6
ASCENT Project RefNo 059
Access to Tyndall
P. Schüffelgen, D. Rosenbach, E. Neumann, M.P. Stehno, M. Lanius, J. Zhao, M. Wang,
B. Sheehan, M. Schmidt, B. Gao, A. Brinkman, … “Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films”, Journal of Crystal Growth, vol 477, 1 November 2017, pp 183-7
DOI: 10.1016/j.jcrysgro.2017.03.035
ASCENT Project RefNo 050
Access to Tyndall
M. Dragoman; M. Aldrigo; S. Iordanescu; M. Modreanu; N. Cordero, “Coupled bow-tie antenna — HfO2 MIM diode for millimetre wave detection applications”, 2017 International Semiconductor Conference (CAS), Sinaia (Romania), 11-14 October 2017, pp. 119-22
DOI: 10.1109/SMICND.2017.8101174
ASCENT Project RefNo 081
Access to Tyndall nano-fabrication facilities.
J. Muñoz-Gorriz; S. Monaghan; K. Cherkaoui; J. Suñé; P.K. Hurley; E. Miranda, “Exploring the Breakdown Spot Spatial Distribution in Metal-Insulator-Metal Capacitors Using the Wavelets Method”, DRIP XVII, 17th Conference on defects-recognition, imaging and physics in semiconductors, 8-12 October 2017, Valladolid, Spain
ASCENT Project RefNo 030
Access to Tyndall
J. Muñoz-Gorriz; S. Monaghan; K. Cherkaoui; J. Suñé; P.K. Hurley; E. Miranda, “Spatial analysis of failure sites in large area MIM capacitors using wavelets”, Microelectronic Engineering, v.178, pp. 10-6
DOI: 10.1016/j.mee.2017.04.011
ASCENT Project RefNo 030
Access to Tyndall
T. Karatsori; C. Theodorou; R. Lavieville; T. Chiarella; J. Mitard; N. Horiguchi; C.A. Dimitriadis; G. Ghibaudo, “Statistical Characterization and Modeling of Drain Current Local and Global Variability in 14nm Bulk FinFETs”, 30th IEEE International Conference on Microelectronic Test Structures (ICMTS), Grenoble (France), 27-30 March 2017, pp. 49-53
DOI: 10.1109/ICMTS.2017.7954263
ASCENT Project RefNo 011
Access to imec
ASCENT Project RefNo 036
Virtual Access
Carlos Márquez, “Electrical Characterization of Reliability in Advanced Silicon-on-Insulator Structures for sub-22nm Technologies”, PhD thesis, University of Granada, Spain
University of Granada Repository [Thesis 26499551] (Open Access)
ASCENT Project RefNo 010
Access to Tyndall
M. Karner; O. Baumgartner; Z. Stanojević; F. Schanovsky; G. Strof; C. Kernstock; H. W. Karner; G. Rzepa; T. Grasset, “Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations”, IEEE International Electron Devices Meeting (IEDM), San Francisco (USA), 3-7 Dec 2016, pp. 30.7.1-4
DOI: 10.1109/IEDM.2016.7838516
ASCENT Project RefNo 043
Virtual Access
A. Rodriguez-Fernandez; S. Monaghan; J. Suñé; P.K. Hurley; X. Aymerich; E. Miranda, “Nonhomogeneous Generation of Filamentary Paths in High-K Oxide Films Caused by Localized Electrical Stress”, International Workshop on Oxide Electronics, October 2016, Nanjing, China
ASCENT Project RefNo 030
Access to Tyndall
Ye, Liang, “Molecular monolayers for doping silicon: from doping dose control to device applications”, PhD thesis, Chapter 6, pp. 77-90; Univ. of Twente, ISBN 978.90.365.4149-7
DOI: 10.3990/1.9789036541497 (Open Access)
Univ Twente Repository
ASCENT Project RefNo 029
Access to Tyndall