A. Tonon, E. Di Russo, F. Sgarbossa, L. Bacci, N. Argiolas, C. Scian, Y.P. Ivanov, G. Divitini, B. Sheehan, D. De Salvador, A. Gasparotto, V. Morandi, R. Duffy, and E. Napolitani, “Laser induced crystallization of sputtered MoS2 thin films”, Materials Science in Semiconductor Processing, 2023, 164, 107616
DOI: 10.1016/j.mssp.2023.107616
ASCENT+ Joint Research Activities (JRA)
P. Millington-Hotze, S. Manna, S.F. Covre da Silva, A. Rastelli, and E.A. Chekhovich, “Nuclear spin diffusion in the central spin system of a GaAs/AlGaAs quantum dot”, nature communications, 14, 2677 (2023)
DOI: 10.1038/s41467-023-38349-0 (Open Access)
ASCENT+ Joint Research Activities (JRA)
E. Di Russo, A. Tonon, A. Mischianti, F. Sgarbossa, E. Coleman, F. Gity, L. Panarella, B. Sheehan, V.A. Lebedev, D. De Salvador, R. Duffy, and E. Napolitani, “Synthesis of Large-Area Crystalline MoS2 by Sputter Deposition and Pulsed Laser Annealing”, ACS Appl. Electron. Mater., 2023, 5, 5, pp. 2862-75
ASCENT+ Joint Research Activities (JRA)
B.U. Lehner, T. Seidelmann, G. Undeutsch, C. Schimpf, S. Manna, M. Gawełczyk, S.F. Covre da Silva, X. Yuan, S. Stroj, D.E. Reiter, V.M. Axt, and A. Rastelli, “Beyond the Four-Level Model: Dark and Hot States in Quantum Dots Degrade Photonic Entanglement”, Nano Letters, 2023, 23, 4, pp. 1409–15 (February 6, 2023)
DOI: 10.1021/acs.nanolett.2c04734 (Open Access)
DOI: 10.5281/zenodo.7611998 (Open Data Access)
ASCENT+ Joint Research Activities (JRA)
F. Basso Basset, M. Valeri, J. Neuwirth, E. Polino, M.B. Rota, D. Poderini, C. Pardo, G. Rodari, E. Roccia, S.F. Covre da Silva, G. Ronco, N. Spagnolo, A. Rastelli, G. Carvacho, F. Sciarrino, and R. Trotta, “Daylight entanglement-based quantum key distribution with a quantum dot source”, Quantum Sci. Technol., 8, 025002 (2023)
DOI: 10.1088/2058-9565/acae3d (Open Access)
ASCENT+ Joint Research Activities (JRA)
T. Seidelmann, C. Schimpf, T.K. Bracht, M. Cosacchi, A. Vagov, A. Rastelli, D.E. Reiter, and V.M. Axt, “Two-Photon Excitation Sets Limit to Entangled Photon Pair Generation from Quantum Emitters”, Phys. Rev. Lett., 129, 193604 (November 4, 2022)
DOI: 10.1103/PhysRevLett.129.193604
ASCENT+ Joint Research Activities (JRA)
G. Carvacho, E. Roccia, M. Valeri, F. Basso Basset, D. Poderini, C. Pardo, E. Polino, L. Carosini, M.B. Rota, J. Neuwirth, S.F. Covre da Silva, A. Rastelli, N. Spagnolo, R. Chaves, R. Trotta, and F. Sciarrino, “Quantum violation of local causality in an urban network using hybrid photonic technologies”, Optica, 9, 5, pp. 572-8 (2022)
DOI: 10.1364/OPTICA.451523 (Open Access)
ASCENT+ Joint Research Activities (JRA)
J. Münzberg, F. Draxl, S.F. Covre da Silva, Y. Karli, S. Manna, A. Rastelli, G. Weihs, and R. Keil, “Fast and efficient demultiplexing of single photons from a quantum dot with resonantly enhanced electro-optic modulators”, APL Photonics, 7, 070802 (2022)
DOI: 10.1063/5.0091867 (Open Access)
DOI: 10.5281/zenodo.6337697 (Open Data Access)
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M. Mattinen, F. Gity, E. Coleman, J.F.A. Vonk, M.A. Verheijen, R. Duffy, W.M.M. Kessels, and A.A. Bol, “Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100°C through Control of Plasma Chemistry”, Chem. Mater., 2022, 34, 16, pp. 7280–92.
DOI: 10.1021/acs.chemmater.2c01154 (Open Access)
ASCENT+ Transnational Access Project 227
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C. Schimpf, S. Manna, S.F. Covre da Silva, M. Aigner, and A. Rastelli, “Entanglement-based quantum key distribution with a blinking-free quantum dot operated at a temperature up to 20 K”, Advanced Photonics, 3(6), 065001 (2021)
DOI: 10.1117/1.AP.3.6.065001 (Open Access)
ASCENT+ Joint Research Activities (JRA)
E. Pelucchi, G. Fagas, I. Aharonovich, D. Englund, E. Figueroa, Q. Gong, H. Hannes, J. Liu, C.Y. Lu, N. Masuda, J.W. Pan, F. Schreck, F. Sciarrino, C. Silberhorn, J. Wang, and K.D. Jöns, “The potential and global outlook of integrated photonics for quantum technologies”, Nature Review Physics, 2021
DOI: 10.1038/s42254-021-00398-z
(Green Open Access)
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H. Huang, S. Manna, C. Schimpf, M. Reindl, X. Yuan, Y. Zhang, S.F. Covre da Silva, and A. Rastelli, “Bright Single Photon Emission from Quantum Dots Embedded in a Broadband Planar Optical Antenna”, Advanced Optical Materials, 2021, 9, 2001490
DOI: 10.1002/adom.202001490 (Open Access)
ASCENT+ Joint Research Activities (JRA)
E. Coleman, G. Mirabelli, P. Bolshakov, P. Zhao, E. Caruso, F. Gity, S. Monaghan, K. Cherkaoui, V. Balestra, R.M. Wallace, C.D. Young, R. Duffy, and P.K. Hurley, “Investigating interface states and oxide traps in the MoS2/oxide/Si system”, Solid-State Electronics, 186, 108123 (Dec 2021)
DOI: 10.1016/j.sse.2021.108123 (Open Access)
ASCENT Joint Research Activities (JRA)
S.F. Covre da Silva, G. Undeutsch, B. Lehner, S. Manna, T.M. Krieger, M. Reindl, C. Schimpf, R. Trotta, and A. Rastelli, “GaAs quantum dots grown by droplet etching epitaxy as quantum light sources”, Appl. Phys. Lett., 119, 120502 (2021)
DOI: 10.1063/5.0057070 (Open Access)
ASCENT Joint Research Activities (JRA)
H. Huang, D. Csontosová, S. Manna, Y. Huo, R. Trotta, A. Rastelli, and P. Klenovský, “Electric field induced tuning of electronic correlation in weakly confining quantum dots”, Phys. Rev. B, 104, 165401 (2021)
DOI: 10.1103/PhysRevB.104.165401 (Open Access)
ASCENT Joint Research Activities (JRA)
C. Schimpf, M. Reindl, F. Basso Basset, K.D. Jöns, R. Trotta, and A. Rastelli, “Quantum dots as potential sources of strongly entangled photons: Perspectives and challenges for applications in quantum networks”, Appl. Phys. Lett., 118, 100502 (2021)
DOI: 10.1063/5.0038729 (Open Access)
ASCENT Joint Research Activities (JRA)
C. Marquez, N. Salazar, F. Gity, C. Navarro, G. Mirabelli, J.C. Galdon, R. Duffy, S. Navarro, P.K. Hurley and F. Gamiz, “Investigating the transient response of Schottky barrier back-gated MoS2 transistors”, 2D Materials, vol 7, no 2, 025040
ASCENT Transnational Access Project 067
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C. Marquez, N. Salazar, F. Gity, J.C. Galdon, C. Navarro, C. Sampedro, P.K. Hurley, E.Y. Chang and F. Gamiz, “Hysteresis in As-Synthesized MoS2 Transistors: Origin and Sensing Perspectives”, Micromachines 2021, 12 (6), 646
DOI: 10.3390/mi12060646 (Open Access)
ASCENT Transnational Access Project 067
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Y. Takeuchi, A. Violas, T. Fujita, Y. Kumamoto, M Modreanu, T. Tanaka, K. Fujita and N. Takeyasu, “Hot Carrier Generation in Two-Dimensional Silver Nanoparticle Arrays at Different Excitation Wavelengths under On-Resonant Conditions”, Journal of Physical Chemistry.
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G. Deligeorgis, V. Kampylafka, A. Kostopoulos, M. Modreanu, M. Schmidt, E. Gagaoudakis, K. Tsagaraki, V. Kontomitrou, G. Konstantinidis, G. Kiriakidis and E. Aperathitis, “Sputtered ZnO Nanostructure Homojunctions Fabricated on Room Temperature Pre-patterned Substrates”, 45th International Conference on Micro-Nano Engineering 2019, 16-20 September 2019, Rhodes, Greece.
ASCENT Project RefNo 046
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M.S. Bhoir, T. Chiarella, L.Å. Ragnarsson, J. Mitard, V. Terzeiva, N. Horiguchi and N.R. Mohapatra, “Variability sources in nanoscale bulk FinFETs and TiTaN- a promising low variability WFM for 7/5nm CMOS nodes”, IEDM 2019 Proceedings, San Francisco (USA) 7-11 Dec 2019 (to be published)
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V. Kampylafka, A. Kostopoulos, M. Modreanu, M. Schmidt, E. Gagaoudakis, K. Tsagaraki, V. Kontomitrou, G. Konstantinidis, G. Deligeorgis, G. Kiriakidis and E. Aperathitis, “Long-term stability of transparent n/p ZnO homojunctions grown by RF-sputtering at room-temperature”, Journal of Materiomics (2019) (in press)
DOI: 10.1016/j.jmat.2019.02.006
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B. Yi, G.S. Yang, S. Barraud, L. Brevard, J.W. Lee and J.W. Yang, “Physics based Compact Model of Low-Frequency Noise for Gate-All-Around MOSFETs”, 26th Korean Conference on Semiconductors – 13-15 Feb 2019, Gangwon-do
ASCENT Project RefNo 087
Access to CEA-Leti 300mm wafer with nanowires of geometries down to ∼10nm.
G.S. Yang, D.H. Kim, D.G. Park, S.H. Kim, J.C. Kim, S. Barraud, L. Brevard and J.W. Lee “Low Frequency Noise Variability Analysis Depending on Epi-Source/Drain in GAA (Gate-All-Around) FET”, 26th Korean Conference on Semiconductors – 13-15 Feb 2019, Gangwon-do
ASCENT Project RefNo 087
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M.S. Bhoir, T. Chiarella, L.Å. Ragnarsson, J. Mitard, V. Terzeiva, N. Horiguchi and N.R. Mohapatra, “Analog Performance and its Variability in Sub-10nm Fin-width FinFETs: A Detailed Analysis”, IEEE Journal of the Electron Devices Society.
DOI: 10.1109/JEDS.2019.2934575
ASCENT Project RefNo 113
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J. MacHale, F. Meaney, N. Kennedy, L. Eaton, G. Mirabelli, M. White, K. Thomas, E. Pelucchi, D.H. Petersen, R. Lin, N. Petkov, J. Connolly, C. Hatem, F. Gity, L. Ansari, B. Long and R. Duffy, “Exploring Conductivity in ex-situ Doped Si Thin Films as Thickness Approaches 5 nm”, Journal of Applied Physics 125, 225709 (2019)
DOI: 10.1063/1.5098307
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M.S. Bhoir, N.R. Mohapatra, T. Chiarella, L.Å. Ragnarsson, J. Mitard, V. Terzeiva and N. Horiguchi, “Effect of Sub-10nm Fin-widths on the Analog Performance of FinFETs”, 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, Singapore, 2019, pp. 7-9
DOI: 10.1109/EDTM.2019.8731200
ASCENT Project RefNo 113
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J. Muñoz-Gorriz , D. Blachier, G. Reimbold, F. Campabadal, J. Suñé, S. Monaghan, K. Cherkaoui, P. K. Hurley, and E. Miranda, “Assessing the Correlation Between Location and Size of Catastrophic Breakdown Events in High-K MIM Capacitors”, Trans. on Device and Materials Reliability, vol. 19, no. 2, June 2019, pp. 452-60
DOI: 10.1109/TDMR.2019.2917138
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A. Mazurak, J. Jasiński, B. Majkusiak, “Effect of traps-to-gate tunnel communication on C-V characteristics of MIS capacitors”, Microelectronic Engineering, 215 (2019), pp. 111011.1-5
DOI: 10.1016/j.mee.2019.111011
ASCENT Project RefNo 130
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A. Mazurak, J. Jasiński, B. Majkusiak, “Determination of border/bulk traps parameters based on (C-G-V) admittance
measurements”, Journal of Vacuum Science & Technology B 37, 032904 (2019), pp. 032904.1-9
DOI: 10.1116/1.5060674
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Yu.V. Gomeniuk, P.N. Okholin, T.E.Rudenko, Yu.Yu. Gomeniuk, T.M. Nazarova, V. Djara, K. Cherkaoui, P.K. Hurley, A.N. Nazarov, “RF Plasma Treatment of Junctionless Pd-Al2O3-InGaAs MISFETs”, VIII Ukrainian scientific conference on physics of semiconductors (USCPS-8), October 2-4, 2018, Uzhgorod (Ukraine)
ASCENT Project RefNo 059
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S. Iadanza, A. Tedesco, G. Giannino, M. Grande, L. Ó Faolain, “Silicon nitride 1D-photonic crystal cavity for optical sensing in the near-infrared spectrum in air and liquid”, Photonics Ireland 2018, 3-5 September 2018, Cork (Ireland)
ASCENT Project RefNo 077
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A. Pajkanovic; G. Stojanovic, “Temperature Performance of Meander-Type Inductor in Silicon Technology”,
Proc. 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD2018), 2-5 July 2018, Prague (Czech Republic), pp. 193-6
DOI: 10.1109/SMACD.2018.8434918
ASCENT Project RefNo 100
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S. Iadanza, A. Bakoz, D. Panettieri, A. Tedesco, G. Giannino, M. Grande, L. Ó Faolain, “Thermally stable external cavity laser based on silicon nitride periodic nanostructures” (Invited Paper), Proc. 20th International Conference on Transparent Optical Networks (ICTON2018), 1-5 July 2018, Bucharest (Romania)
DOI: 10.1109/ICTON.2018.8473622
ASCENT Project RefNo 077
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M. Aldrigo, M. Dragoman, M. Modreanu, I. Povey, S. Iordanescu, D. Vasilache, A. Dinescu, M. Shanawani, D. Masotti, “Harvesting Electromagnetic Energy in the V-Band Using a Rectenna Formed by a Bow Tie Integrated with a 6nm-Thick Au/HfO2/Pt Metal-Insulator-Metal Diode”, IEEE Trans. on Electron Devices, Vol. 65, No. 7, pp. 2973-80 (July 2018)
DOI: 10.1109/TED.2018.2835138
ASCENT Project RefNo 081
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Pajkanovic, Aleksander, “Design and Characterisation of an Inductor and a Low-Noise Amplifier in Monolithic Integrated Circuit Technology for Wideband Operation”, PhD thesis, Faculty of Technical Sciences, Univ. of Novi Sad.
Univ Novi Sad Repository [in Serbian] (Open Access)
ASCENT Project RefNo 100
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A. Nazarov, Y. Gomeniuk, Y. Gomeniuk, P. Okholin, T. Nazarova, V. Djara, K. Cherkaoui, P. Hurley, “Low-Temperature RF Plasma Treatment Effect on Junctionless Pd-Al2O3-InGaAs MISFET Operation”,
233rd ECS Meeting in Seattle (WA, USA) (May 13-17, 2018), Symposium H02: Advanced CMOS-Compatible Semiconductor Devices 18
ECS Transaction “Advanced CMOS-Compatible Semiconductor Devices 18”, v.85, n.8, pp. 137-42 (2018)
DOI: 10.1149/08508.0137ecst
ASCENT Project RefNo 059
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M. van Druenen; G. Collins; C. Glynn; C. O’Dwyer and J.D. Holmes, “Functionalization of SiO2 Surfaces for Si Monolayer Doping with Minimal Carbon Contamination”, ACS Appl. Mater. Interfaces, 2018, 10 (2), pp. 2191–201
DOI: 10.1021/acsami.7b16950
ASCENT Project RefNo 070
Access to CEA-Leti
Yu.V. Gomeniuk, Yu.Yu. Gomeniuk, P.N. Okholin, T.M. Nazarova, K. Cherkaoui, P.K. Hurley and A.N. Nazarov, “Low-temperature RF plasma treatment of junctionless Pd-Al2O3-InGaAs MISFETs”, Promising Trends of Modern Electronics, Informational and Computer systems (MEICS-2017), November 22-24, 2017, Dnipro (Ukraine), pp. 205-6
ASCENT Project RefNo 059
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P. Schüffelgen, D. Rosenbach, E. Neumann, M.P. Stehno, M. Lanius, J. Zhao, M. Wang,
B. Sheehan, M. Schmidt, B. Gao, A. Brinkman, … “Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films”, Journal of Crystal Growth, vol 477, 1 November 2017, pp 183-7
DOI: 10.1016/j.jcrysgro.2017.03.035
ASCENT Project RefNo 050
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M. Dragoman; M. Aldrigo; S. Iordanescu; M. Modreanu; N. Cordero, “Coupled bow-tie antenna — HfO2 MIM diode for millimetre wave detection applications”, 2017 International Semiconductor Conference (CAS), Sinaia (Romania), 11-14 October 2017, pp. 119-22
DOI: 10.1109/SMICND.2017.8101174
ASCENT Project RefNo 081
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J. Muñoz-Gorriz; S. Monaghan; K. Cherkaoui; J. Suñé; P.K. Hurley; E. Miranda, “Exploring the Breakdown Spot Spatial Distribution in Metal-Insulator-Metal Capacitors Using the Wavelets Method”, DRIP XVII, 17th Conference on defects-recognition, imaging and physics in semiconductors, 8-12 October 2017, Valladolid, Spain
ASCENT Project RefNo 030
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J. Muñoz-Gorriz; S. Monaghan; K. Cherkaoui; J. Suñé; P.K. Hurley; E. Miranda, “Spatial analysis of failure sites in large area MIM capacitors using wavelets”, Microelectronic Engineering, v.178, pp. 10-6
DOI: 10.1016/j.mee.2017.04.011
ASCENT Project RefNo 030
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T. Karatsori; C. Theodorou; R. Lavieville; T. Chiarella; J. Mitard; N. Horiguchi; C.A. Dimitriadis; G. Ghibaudo, “Statistical Characterization and Modeling of Drain Current Local and Global Variability in 14nm Bulk FinFETs”, 30th IEEE International Conference on Microelectronic Test Structures (ICMTS), Grenoble (France), 27-30 March 2017, pp. 49-53
DOI: 10.1109/ICMTS.2017.7954263
ASCENT Project RefNo 011
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ASCENT Project RefNo 036
Virtual Access
Carlos Márquez, “Electrical Characterization of Reliability in Advanced Silicon-on-Insulator Structures for sub-22nm Technologies”, PhD thesis, University of Granada, Spain
University of Granada Repository [Thesis 26499551] (Open Access)
ASCENT Project RefNo 010
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M. Karner; O. Baumgartner; Z. Stanojević; F. Schanovsky; G. Strof; C. Kernstock; H. W. Karner; G. Rzepa; T. Grasset, “Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations”, IEEE International Electron Devices Meeting (IEDM), San Francisco (USA), 3-7 Dec 2016, pp. 30.7.1-4
DOI: 10.1109/IEDM.2016.7838516
ASCENT Project RefNo 043
Virtual Access
A. Rodriguez-Fernandez; S. Monaghan; J. Suñé; P.K. Hurley; X. Aymerich; E. Miranda, “Nonhomogeneous Generation of Filamentary Paths in High-K Oxide Films Caused by Localized Electrical Stress”, International Workshop on Oxide Electronics, October 2016, Nanjing, China
ASCENT Project RefNo 030
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Ye, Liang, “Molecular monolayers for doping silicon: from doping dose control to device applications”, PhD thesis, Chapter 6, pp. 77-90; Univ. of Twente, ISBN 978.90.365.4149-7
DOI: 10.3990/1.9789036541497 (Open Access)
Univ Twente Repository
ASCENT Project RefNo 029
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