Y. Takeuchi, A. Violas, T. Fujita, Y. Kumamoto, M Modreanu, T. Tanaka, K. Fujita and N. Takeyasu, “Hot Carrier Generation in Two-Dimensional Silver Nanoparticle Arrays at Different Excitation Wavelengths under On-Resonant Conditions”, Journal of Physical Chemistry.

DOI: 10.1021/acs.jpcc.0c04034

ASCENT Project RefNo 055
Access to Tyndall HR-TEM physical and optical characterisation.



G. Deligeorgis, V. Kampylafka, A. Kostopoulos, M. Modreanu, M. Schmidt, E. Gagaoudakis, K. Tsagaraki, V. Kontomitrou, G. Konstantinidis, G. Kiriakidis and E. Aperathitis, “Sputtered ZnO Nanostructure Homojunctions Fabricated on Room Temperature Pre-patterned Substrates”, 45th International Conference on Micro-Nano Engineering 2019, 16-20 September 2019, Rhodes, Greece.

ASCENT Project RefNo 046
Access to Tyndall HR-TEM physical characterisation.



M.S. Bhoir, T. Chiarella, L.Å. Ragnarsson, J. Mitard, V. Terzeiva, N. Horiguchi and N.R. Mohapatra, “Variability sources in nanoscale bulk FinFETs and TiTaN- a promising low variability WFM for 7/5nm CMOS nodes”, IEDM 2019 Proceedings, San Francisco (USA) 7-11 Dec 2019 (to be published)

ASCENT Project RefNo 113
Access to imec finFET test chips and characterisation facilities



V. Kampylafka, A. Kostopoulos, M. Modreanu, M. Schmidt, E. Gagaoudakis, K. Tsagaraki, V. Kontomitrou, G. Konstantinidis, G. Deligeorgis, G. Kiriakidis and E. Aperathitis, “Long-term stability of transparent n/p ZnO homojunctions grown by RF-sputtering at room-temperature”, Journal of Materiomics (2019) (in press)

DOI: 10.1016/j.jmat.2019.02.006

ASCENT Project RefNo 046
Access to Tyndall HR-TEM physical characterisation.



B. Yi, G.S. Yang, S. Barraud, L. Brevard, J.W. Lee and J.W. Yang, “Physics based Compact Model of Low-Frequency Noise for Gate-All-Around MOSFETs”, 26th Korean Conference on Semiconductors – 13-15 Feb 2019, Gangwon-do

ASCENT Project RefNo 087
Access to CEA-Leti 300mm wafer with nanowires of geometries down to ∼10nm.



G.S. Yang, D.H. Kim, D.G. Park, S.H. Kim, J.C. Kim, S. Barraud, L. Brevard and J.W. Lee “Low Frequency Noise Variability Analysis Depending on Epi-Source/Drain in GAA (Gate-All-Around) FET”, 26th Korean Conference on Semiconductors – 13-15 Feb 2019, Gangwon-do

ASCENT Project RefNo 087
Access to CEA-Leti 300mm wafer with nanowires of geometries down to ∼10nm.



M.S. Bhoir, T. Chiarella, L.Å. Ragnarsson, J. Mitard, V. Terzeiva, N. Horiguchi and N.R. Mohapatra, “Analog Performance and its Variability in Sub-10nm Fin-width FinFETs: A Detailed Analysis”, IEEE Journal of the Electron Devices Society.

DOI: 10.1109/JEDS.2019.2934575

ASCENT Project RefNo 113
Access to imec finFET test chips and characterisation facilities



J. MacHale, F. Meaney, N. Kennedy, L. Eaton, G. Mirabelli, M. White, K. Thomas, E. Pelucchi, D.H. Petersen, R. Lin, N. Petkov, J. Connolly, C. Hatem, F. Gity, L. Ansari, B. Long and R. Duffy, “Exploring Conductivity in ex-situ Doped Si Thin Films as Thickness Approaches 5 nm”, Journal of Applied Physics 125, 225709 (2019)

DOI: 10.1063/1.5098307

ASCENT Joint Research Activities (JRA)



M.S. Bhoir, N.R. Mohapatra, T. Chiarella, L.Å. Ragnarsson, J. Mitard, V. Terzeiva and N. Horiguchi, “Effect of Sub-10nm Fin-widths on the Analog Performance of FinFETs”, 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, Singapore, 2019, pp. 7-9

DOI: 10.1109/EDTM.2019.8731200

ASCENT Project RefNo 113
Access to imec finFET test chips and characterisation facilities



J. Muñoz-Gorriz , D. Blachier, G. Reimbold, F. Campabadal, J. Suñé, S. Monaghan, K. Cherkaoui, P. K. Hurley, and E. Miranda, “Assessing the Correlation Between Location and Size of Catastrophic Breakdown Events in High-K MIM Capacitors”, Trans. on Device and Materials Reliability, vol. 19, no. 2, June 2019, pp. 452-60

DOI: 10.1109/TDMR.2019.2917138

ASCENT Project RefNo 134
Access to CEA-Leti infra-red characterisation



A. Mazurak, J. Jasiński, B. Majkusiak, “Effect of traps-to-gate tunnel communication on C-V characteristics of MIS capacitors”, Microelectronic Engineering, 215 (2019), pp. 111011.1-5

DOI: 10.1016/j.mee.2019.111011

ASCENT Project RefNo 130
Access to CEA-Leti test chips and characterisation



A. Mazurak, J. Jasiński, B. Majkusiak, “Determination of border/bulk traps parameters based on (C-G-V) admittance
measurements”
, Journal of Vacuum Science & Technology B 37, 032904 (2019), pp. 032904.1-9

DOI: 10.1116/1.5060674

ASCENT Project RefNo 130
Access to CEA-Leti test chips and characterisation



Yu.V. Gomeniuk, P.N. Okholin, T.E.Rudenko, Yu.Yu. Gomeniuk, T.M. Nazarova, V. Djara, K. Cherkaoui, P.K. Hurley, A.N. Nazarov, “RF Plasma Treatment of Junctionless Pd-Al2O3-InGaAs MISFETs”, VIII Ukrainian scientific conference on physics of semiconductors (USCPS-8), October 2-4, 2018, Uzhgorod (Ukraine)

ASCENT Project RefNo 059
Access to Tyndall



S. Iadanza, A. Tedesco, G. Giannino, M. Grande, L. Ó Faolain, “Silicon nitride 1D-photonic crystal cavity for optical sensing in the near-infrared spectrum in air and liquid”, Photonics Ireland 2018, 3-5 September 2018, Cork (Ireland)

ASCENT Project RefNo 077
Access to Tyndall



A. Pajkanovic; G. Stojanovic, “Temperature Performance of Meander-Type Inductor in Silicon Technology”,
Proc. 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD2018), 2-5 July 2018, Prague (Czech Republic), pp. 193-6
DOI: 10.1109/SMACD.2018.8434918

ASCENT Project RefNo 100
Access to Tyndall



S. Iadanza, A. Bakoz, D. Panettieri, A. Tedesco, G. Giannino, M. Grande, L. Ó Faolain, “Thermally stable external cavity laser based on silicon nitride periodic nanostructures” (Invited Paper), Proc. 20th International Conference on Transparent Optical Networks (ICTON2018), 1-5 July 2018, Bucharest (Romania)
DOI: 10.1109/ICTON.2018.8473622

ASCENT Project RefNo 077
Access to Tyndall



M. Aldrigo, M. Dragoman, M. Modreanu, I. Povey, S. Iordanescu, D. Vasilache, A. Dinescu, M. Shanawani, D. Masotti, “Harvesting Electromagnetic Energy in the V-Band Using a Rectenna Formed by a Bow Tie Integrated with a 6nm-Thick Au/HfO2/Pt Metal-Insulator-Metal Diode”, IEEE Trans. on Electron Devices, Vol. 65, No. 7, pp. 2973-80 (July 2018)
DOI: 10.1109/TED.2018.2835138

ASCENT Project RefNo 081
Access to Tyndall



Pajkanovic, Aleksander, “Design and Characterisation of an Inductor and a Low-Noise Amplifier in Monolithic Integrated Circuit Technology for Wideband Operation”, PhD thesis, Faculty of Technical Sciences, Univ. of Novi Sad.
Univ Novi Sad Repository [in Serbian] (Open Access)

ASCENT Project RefNo 100
Access to Tyndall



A. Nazarov, Y. Gomeniuk, Y. Gomeniuk, P. Okholin, T. Nazarova, V. Djara, K. Cherkaoui, P. Hurley, “Low-Temperature RF Plasma Treatment Effect on Junctionless Pd-Al2O3-InGaAs MISFET Operation”,
233rd ECS Meeting in Seattle (WA, USA) (May 13-17, 2018), Symposium H02: Advanced CMOS-Compatible Semiconductor Devices 18
ECS Transaction “Advanced CMOS-Compatible Semiconductor Devices 18”, v.85, n.8, pp. 137-42 (2018)
DOI: 10.1149/08508.0137ecst

ASCENT Project RefNo 059
Access to Tyndall



M. van Druenen; G. Collins; C. Glynn; C. O’Dwyer and J.D. Holmes, “Functionalization of SiO2 Surfaces for Si Monolayer Doping with Minimal Carbon Contamination”, ACS Appl. Mater. Interfaces, 2018, 10 (2), pp. 2191–201
DOI: 10.1021/acsami.7b16950

ASCENT Project RefNo 070
Access to CEA-Leti



Yu.V. Gomeniuk, Yu.Yu. Gomeniuk, P.N. Okholin, T.M. Nazarova, K. Cherkaoui, P.K. Hurley and A.N. Nazarov, “Low-temperature RF plasma treatment of junctionless Pd-Al2O3-InGaAs MISFETs”, Promising Trends of Modern Electronics, Informational and Computer systems (MEICS-2017), November 22-24, 2017, Dnipro (Ukraine), pp. 205-6

ASCENT Project RefNo 059
Access to Tyndall



P. Schüffelgen; D. Rosenbach; E. Neumann; M.P. Stehno; M. Lanius; J. Zhao; M. Wang; B. Sheehan; M. Schmidt; B. Gao; A. Brinkman, … “Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films”, Journal of Crystal Growth, vol 477, 1 November 2017, pp 183-7
DOI: 10.1016/j.jcrysgro.2017.03.035

ASCENT Project RefNo 050
Access to Tyndall



M. Dragoman; M. Aldrigo; S. Iordanescu; M. Modreanu; N. Cordero, “Coupled bow-tie antenna — HfO2 MIM diode for millimetre wave detection applications”, 2017 International Semiconductor Conference (CAS), Sinaia (Romania), 11-14 October 2017, pp. 119-22
DOI: 10.1109/SMICND.2017.8101174

ASCENT Project RefNo 081
Access to Tyndall nano-fabrication facilities.



J. Muñoz-Gorriz; S. Monaghan; K. Cherkaoui; J. Suñé; P.K. Hurley; E. Miranda, “Exploring the Breakdown Spot Spatial Distribution in Metal-Insulator-Metal Capacitors Using the Wavelets Method”, DRIP XVII, 17th Conference on defects-recognition, imaging and physics in semiconductors, 8-12 October 2017, Valladolid, Spain

ASCENT Project RefNo 030
Access to Tyndall



J. Muñoz-Gorriz; S. Monaghan; K. Cherkaoui; J. Suñé; P.K. Hurley; E. Miranda, “Spatial analysis of failure sites in large area MIM capacitors using wavelets”, Microelectronic Engineering, v.178, pp. 10-6
DOI: 10.1016/j.mee.2017.04.011

ASCENT Project RefNo 030
Access to Tyndall



T. Karatsori; C. Theodorou; R. Lavieville; T. Chiarella; J. Mitard; N. Horiguchi; C.A. Dimitriadis; G. Ghibaudo, “Statistical Characterization and Modeling of Drain Current Local and Global Variability in 14nm Bulk FinFETs”, 30th IEEE International Conference on Microelectronic Test Structures (ICMTS), Grenoble (France), 27-30 March 2017, pp. 49-53
DOI: 10.1109/ICMTS.2017.7954263

ASCENT Project RefNo 011
Access to imec

ASCENT Project RefNo 036
Virtual Access



Carlos Márquez, “Electrical Characterization of Reliability in Advanced Silicon-on-Insulator Structures for sub-22nm Technologies”, PhD thesis, University of Granada, Spain
University of Granada Repository [Thesis 26499551] (Open Access)

ASCENT Project RefNo 010
Access to Tyndall



M. Karner; O. Baumgartner; Z. Stanojević; F. Schanovsky; G. Strof; C. Kernstock; H. W. Karner; G. Rzepa; T. Grasset, “Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations”, IEEE International Electron Devices Meeting (IEDM), San Francisco (USA), 3-7 Dec 2016, pp. 30.7.1-4
DOI: 10.1109/IEDM.2016.7838516

ASCENT Project RefNo 043
Virtual Access



A. Rodriguez-Fernandez; S. Monaghan; J. Suñé; P.K. Hurley; X. Aymerich; E. Miranda, “Nonhomogeneous Generation of Filamentary Paths in High-K Oxide Films Caused by Localized Electrical Stress”, International Workshop on Oxide Electronics, October 2016, Nanjing, China

ASCENT Project RefNo 030
Access to Tyndall



Ye, Liang, “Molecular monolayers for doping silicon: from doping dose control to device applications”, PhD thesis, Chapter 6, pp. 77-90; Univ. of Twente, ISBN 978.90.365.4149-7
DOI: 10.3990/1.9789036541497 (Open Access)
Univ Twente Repository

ASCENT Project RefNo 029
Access to Tyndall