Description
Carrier density and mobility database for silicon nanowires
The low field carrier mobilities in rectangular nanowires have been obtained from quantum transport calculations based on the non-equilibrium Green’s function formalism (NEGF) [1]. Three scattering mechanisms have been considered: electron-phonon coupling, surface roughness (SR), and remote Coulomb scattering (RCS). These results have been fitted with analytical models using only 2 fitting parameters: the surface roughness amplitude, and the density of RCS charges in the gate stack. These models are in very good agreement with experimental data for various nanowire cross sections, crystal orientation, and carrier type.
Besides this mobility model, we also provide charge density maps and gate-channel capacitance based on 2D Poisson-Schrödinger simulations. This can be used to calibrate an electrostatic model to complement the mobility model.
These models can be used to optimize trigate or gate-all-around silicon technologies with respect to the low field mobility.
[1] Z. Zeng et al., “A Simple Interpolation Model for the Carrier Mobility in Trigate and Gate-All-Around Silicon NWFETs”, IEEE Transactions on Electron Devices, Vol. 64, No. 6, p. 2485 (2017) [DOI: 10.1109/TED.2017.2691406]
Keywords
Silicon nanowire, carrier mobility model, quantum confinement, quantum transport
Specifications
- Silicon nanowire cross section: one dimension between 5 and 10nm, and the other dimension ranging from a square nanowire (5 to 10nm) to a planar device (infinite)
- Technologies: tri-gate and gate-all-around
- Transport directions: [100] and [110]
- Carrier types: electrons and holes
Ascent+ facility
CEA-Leti
Platform Technology
- Disruptive Devices
Key Enabling Capability
- Modelling / Databases
Publications
[DOI: 10.1109/TED.2017.2691406]
