RF Prober

RF Prober (Testing Capability to 110GHz)

Description

150mm manual probe station without a chuck temperature capability. The prober has 2 independent positioners for manual characterisation. On wafer RF measurements capability from MHz up to 110GHz.


Keywords
Radio frequency (RF), 110GHz, electrical characterisation


Specifications
Model: Summit 12000
Wafer size: Up to 150mm wafers
Temperature Range: Room Temperature
Fully Automated: Single Wafer
RF on Wafer characterisation: Yes to 110GHz

Ascent+ facility
Tyndall

Platform Technologies

  • Nano for Quantum Technologies
  • Disruptive Devices

Key Enabling Technologies

  • Metrology / Characterisation: Electrical characterisation

Case Study
A researcher wants to investigate the effect of low-T plasma treatment on Si nanowires (NWs). Using Tyndall test devices fabricated on SiO2-Si wafer in Tyndall. First they carry out comprehensive electrical characterisation of the devices during visit to the facility. Plasma treatment is then performed at the user’s. The treated devices are then electrically characterised again. The results show how the plasma treatment diffuses doping impurity from surface to bulk of the silicon NWs at low temperature and decrease the contact resistivity between metal contact and Si NW. [Click here for more details]

Additional information

Key Enabling Capability

Metrology / Characterisation

Platform Technology

Disruptive Devices, Nano for Quantum Technologies

Facility

Tyndall