Description
150mm manual probe station without a chuck temperature capability. The prober has 2 independent positioners for manual characterisation. On wafer RF measurements capability from MHz up to 110GHz.
Keywords
Radio frequency (RF), 110GHz, electrical characterisation
Specifications
Model: Summit 12000
Wafer size: Up to 150mm wafers
Temperature Range: Room Temperature
Fully Automated: Single Wafer
RF on Wafer characterisation: Yes to 110GHz
Ascent+ facility
Tyndall
Platform Technologies
- Nano for Quantum Technologies
- Disruptive Devices
Key Enabling Capability
- Metrology / Characterisation: Electrical characterisation
Case Study
A researcher wants to investigate the effect of low-T plasma treatment on Si nanowires (NWs). Using Tyndall test devices fabricated on SiO2-Si wafer in Tyndall. First they carry out comprehensive electrical characterisation of the devices during visit to the facility. Plasma treatment is then performed at the user’s. The treated devices are then electrically characterised again. The results show how the plasma treatment diffuses doping impurity from surface to bulk of the silicon NWs at low temperature and decrease the contact resistivity between metal contact and Si NW. [Click here for more details]
