Access to Tyndall piezoMEMS processing

Material piezo stack
8″ wafer, piezo layer: ScAlN

  1. Single electrode layer stack: optional Thermal oxide layer
  2. Dual electrode layer stack
PiezoMEMS structures fabrication
4″ wafer, piezo layer: AlN

PiezoMEMS processing

Material Stack
Silicon substrate with an optional thermal oxide layer followed by the piezo electric layer of AlScN with a top molybdenum electrode. 8″ wafer

  • Single electrode layer stack
  • Dual Electrode layer stack
PiezoMEMS Structures Fabrication
Piezoelectric MEMS process that combines surface and bulk micromachining to create free standing structures such as piezoelectric cantilevers or membranes for different applications. This process is on 4″ wafer (SOI Substrate) and the piezo layer can be AlN or ScAlN

Piezoelectric material properties: d33 in the range of 5 to 6 pC/N
Device properties are design dependent

Ascent+ facility

Platform Technologies

  • Nano for Quantum Technologies
  • Disruptive Devices
  • Advanced Integration

Key Enabling Capability

  • Processing
  • Devices / Test structures

Key Enabling Capability

Devices / Test Structures, Processing

Platform Technology

Advanced Integration, Disruptive Devices, Nano for Quantum Technologies