Description
MoS2 Crystallisation Data with extended process window
The wafer-scale synthesis of layered transition metal dichalcogenides presenting good crystal quality and uniform coverage is a challenge for the development of next generation electronic devices. We provide structural (Raman, TEM), morphological (AFM, SEM) and compositional (RBS) data of thin MoS2 films deposited on both Si or SiO2-on-Si substrates and crystallised by nanosecond laser annealing. FET transfer characteristics of devices in a bottom-gate configuration were used to determine the MoS2 films properties.
The data have been recently extended to lower MoS2 thicknesses. Notably, reducing the thickness positively impacted sample morphology and crystallinity while broadening the process window for effective crystallisation.
Platform Technologies
- Disruptive Devices
Key Enabling Capability
- Processing
- Modelling / Databases
Typical Applications
These data could be useful to a user aiming at synthesizing crystalline MoS2 layers by sputter deposition followed by pulsed laser annealing, and fabricating FET devices with them.
Publications
E. Di Russo et al. “Synthesis of large area crystalline MoS2 by sputter deposition and pulsed laser annealing”, ACS Appl. Electron. Mater. (2023) – [DOI: 10.1021/acsaelm.3c00362]
A. Tonon et al. “Laser induced crystallization of sputtered MoS2 thin films”, Materials Science in Semiconductor Processing. (2023) – [DOI: 10.1016/j.mssp.2023.107616]
