MoS2 Crystallisation Data
The wafer-scale synthesis of layered transition metal dichalcogenides presenting good crystal quality and uniform coverage is a challenge for the development of next generation electronic devices. We provide structural (Raman, TEM), morphological (AFM, SEM) and compositional (RBS) data of thin MoS2 films deposited on both Si or SiO2-on-Si substrates and crystallized by nanosecond laser annealing. FET transfer characteristics of devices in a bottom-gate configuration were used to determine the MoS2 films properties.
ASCENT+ Virtual Access
To access this data through ASCENT+ Virtual Access, first you must register by filling the Enquiry Form.
Platform Technologies
- Disruptive Devices
Key Enabling Capability
- Processing (data)
- Devices / Test structures
Typical Applications
These data could be useful to a user aiming at synthesizing crystalline MoS2 layers by sputter deposition followed by pulsed laser annealing, and fabricating FET devices with them.
Publication
E. Di Russo et al. “Synthesis of large area crystalline MoS2 by sputter deposition and pulsed laser annealing”, ACS Appl. Electron. Mater. (2023) – [DOI: 10.1021/acsaelm.3c00362]
