III-V MOVPE

The Epitaxy and Physics of Nanostructure (EPN) group at Tyndall runs a metalorganic vapour phase epitaxy (MOVPE) reactor capable of various material deposition. Specifically the EPN facility holds records for lowest impurity GaAs and AlGaAs layers by metalorganic vapour phase epitaxy.

Category:

Description

MOVPE of III-V materials (specifically GaAs-AlGaAs heterostructures)

The EPN group at Tyndall runs one of the purest III-V MOVPE reactor in the world, as proven by record quantum well linewidths. The double reactor is an Aixtron 200 accepting one 2″ wafer, or three 2″ wafers. A suite of characterization tools (XRD, AFM, Photoluminescence, ECV profiling, Hall measurements) allow full characterisation of the structures grown.

Keywords
MOVPE, 2″ wafers, high purity material, GaAs QWs


Specifications
MOVPE Aixtron 200: both single 2″ wafer reactor and 3×2″ wafer reactor

Ascent+ facility
Tyndall

Platform Technologies

  • Nano for Quantum Technologies

Key Enabling Technologies

  • Processing: Nanoscale growth

Publication
Record quantum well linewidth demonstrated repeatedly:
[DOI: 10.1016/j.jcrysgro.2010.07.021]

Additional information

Key Enabling Capability

Processing

Platform Technology

Nano for Quantum Technologies

Facility

Tyndall