Description
Power HEMT with Integrated Driver
By using imec’s GaN IC technology a gate driver and a power switch is placed in a single die. The power switch is a 200V device and the driver is a push-pull topology. In conventional circuits consisting of discrete components, switching speed is limited by gate resistance, which is required to suppress the switching noise induced by the driver-to-gate parasitic inductance. This monolithic integration fully utilizes the fast switching capability of the GaN HEMT because the parasitic inductance on the gate terminal is significantly minimized.
This GaN IC has been manufactured in our GaN-on-SOI technology. Its functionality has been successfully tested in a demonstrator level.
Available in bare die
Keywords
GaN IC, Integrated driver, power HEMT
Specifications
Device characteristics at 25°C:
| Vds (Drain-source breakdown voltage) | 200V |
| Id,sat (Sat. drain current) | 8A |
| Id,con (Continuous drain current) | 3-4A |
| Vth (Threshold voltage) | 3.5V |
| Vgs (Nominal gate-source voltage) | 6V |
| Fmea (Switching Frequency) | up to 2MHz |
| Rds,on @25°C (On-resistance) | 70mΩ |
| Rds,on @150°C (On-resistance) | 140mΩ |
Ascent+ facility
imec
Platform Technology
- Advanced Integration
Key Enabling Capability
- Devices / Test structures
Typical Applications
Used in high frequency power converters where integration helps to achieve clean and smooth switching transition
Publications
[DOI: 10.1109/IEDM19573.2019.8993572]
