Monolithic half-bridge switch
imec’s GaN IC is a unique technology that integrates a high-side and a low-side switch in a single die by solving the back-gating effect of a half-bridge switch. Using a classic GaN-on-Si technology, the common substrate is grounded by the source-to-substrate (Vbs) connection of the low-side switch. As the substrate is common the Vbs of the high-side switch is floating, which results in a back-gating effect that negatively affects the Rdson.
In our technology the problem is solved by processing on SOI wafers, where the buried oxide (BOX) combined with the deep trench isolation (DTI) effectively isolate high-side and low-side switches. Each individual power device has a local contact from the source to the thin silicon layer on top of the BOX, such that Vbs=0V is guaranteed in all cases.
The presented GaN IC has been manufactured in our GaN IC technology on SOI. We have two different types of HB switches, asymmetric half bridge and symmetric half bridge. In case of asymmetric switch, high side and low side has different gate length and in other case, both are of same dimension.
Available in bare die.
GaN IC, Half-bridge
Device characteristics at 25°C:
|Vds (Drain-source breakdown voltage)||200V|
|Id,sat (Sat. drain current)||8A|
|Id,con (Continuous drain current)||3-4A|
|Vth (Threshold voltage)||3.5V|
|Vgs (Nominal gate-source voltage)||6V|
|Fmea (Switching Frequency)||up to 2MHz|
|Rds,on @25°C (On-resistance)||70mΩ|
|Rds,on @150°C (On-resistance)||140mΩ|
- Disruptive Devices
Key Enabling Capability
- Devices / Test structures
Used in any type of synchronous power converters