Half Bridge Switch

Half Bridge Switch

Using imec’s 200V GaN IC platform, a half-bridge switch is developed that consists of a high side switch and a low side switch, connected in series. This half-bridge is an essential element in any type of synchronous regulation.


Monolithic half-bridge switch

imec’s GaN IC is a unique technology that integrates a high-side and a low-side switch in a single die by solving the back-gating effect of a half-bridge switch. Using a classic GaN-on-Si technology, the common substrate is grounded by the source-to-substrate (Vbs) connection of the low-side switch. As the substrate is common the Vbs of the high-side switch is floating, which results in a back-gating effect that negatively affects the Rdson.

In our technology the problem is solved by processing on SOI wafers, where the buried oxide (BOX) combined with the deep trench isolation (DTI) effectively isolate high-side and low-side switches. Each individual power device has a local contact from the source to the thin silicon layer on top of the BOX, such that Vbs=0V is guaranteed in all cases.

The presented GaN IC has been manufactured in our GaN IC technology on SOI. We have two different types of HB switches, asymmetric half bridge and symmetric half bridge. In case of asymmetric switch, high side and low side has different gate length and in other case, both are of same dimension.

Available in bare die.

GaN IC, Half-bridge

Device characteristics at 25°C:

Vds (Drain-source breakdown voltage) 200V
Id,sat (Sat. drain current) 8A
Id,con (Continuous drain current) 3-4A
Vth (Threshold voltage) 3.5V
Vgs (Nominal gate-source voltage) 6V
Fmea (Switching Frequency) up to 2MHz
Rds,on @25°C (On-resistance) 70mΩ
Rds,on @150°C (On-resistance) 140mΩ

Ascent+ facility

Platform Technology

  • Disruptive Devices

Key Enabling Capability

  • Devices / Test structures

Typical Applications
Used in any type of synchronous power converters

[DOI: 10.1109/IEDM19573.2019.8993572]

Additional information

Key Enabling Capability

Devices / Test Structures

Platform Technology

Disruptive Devices