GaN-IC MPW

Description

GaN-IC MPW shuttles

Imec’s GaN-on-SOI IC technology circumvents the limitations of GaN discrete components, allowing designers to monolithically integrate components such as half-bridges and GaN drivers onto the same die, minimizing parasitic inductance.

To make this technology available, imec provides extensive GaN-on-SOI Process Design Kits (PDK) for 200V and 650V technologies. These kits include process documentation, library devices, layout guidelines for custom design, verification, and models.

Low-ohmic and high-ohmic resistors are provided as well as Metal/Oxide/Metal capacitors and low voltage logic devices. These enable you to design highly integrated GaN power systems on chip.

The design is fabricated as part of one of the GaN-IC MPW runs at imec. Access to imec’s GaN-IC MPW PDKs after signature of the Design Kit License Agreement. Participants receive a set of bare dies after ~30 weeks after the submission of their GDS. [Run Schedule]

For more information, click here.

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Keywords
GaN IC, PDK, MPW, power electronics

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Specifications

• PDK: 200V and 650V
• Sample size: 5.18mm × 5.18mm
• Samples/design: 50 to 100

200V e-MODE p-GaN HEMT Datasheet Power Device with W_eff=36mm

Symbol	Description	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings
BVDS	Drain-Source voltage				200	V
ID	Pulsed Drain Current	1 ms pulse			10	A
VGS	Gate-Source voltage				7	V
On/Off state characteristics
BVDS	Drain-Source voltage	VGS=0V, ID=1µA/mm	200			V
IDSS	Drain-Source leakage	VGS=0V, VDS=200V		0.5		µA
IGSS	Gate-Source leakage	VGS=0V, VDS=200V		0.27		µA
RDS-ON	Drain-Source ON resistance	VGS=7V, ID=2A		0.16		Ω
VTH	Gate-Source voltage	maximum gm		2.3		V
		VDS=0.1V, ID=10µA/mm		1.3		V
Dynamic Characteristics
CISS	Input capacitance	VGS=3 VDS=200V f=1MHz		55		pF
COSS	Output capacitance			35		pF
CRSS	Reverse transfer capacitance			0.97		pF

650V e-MODE p-GaN HEMT Datasheet Power Device with W_eff=36mm

Symbol	Description	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings
BVDS	Drain-Source voltage		650			V
ID	Pulsed Drain Current	1 ms pulse			7.5	A
VGS	Gate-Source voltage				7	V
On/Off state characteristics
BVDS	Drain-Source voltage	VGS=0V, ID=1µA/mm	650			V
IDSS	Drain-Source leakage	VGS=0V, VDS=650V, T=25°C		100	1000	nA/mm
		VGS=0V, VDS=650V, T=150°C		50	500	nA/mm
IGSS	Gate reverse leakage	VGS=0V, VDS=650V, T=25°C		50	500	µA
RDS-ON	Drain-Source ON resistance	VGS=7V, VDS=0.1V, T=25°C		14	18	Ω.mm
		VGS=7V, VDS=0.1V, T=150°C		30	35	Ω.mm
VTH	Gate threshold voltage	maximum gm	2.1	2.5	2.9	V
		Dynamic Characteristics
CISS	Input capacitance	VGS=0 VDS=650V f=1MHz		47.2		pF
COSS	Output capacitance			14.6		pF
CRSS	Reverse transfer capacitance			0.12		pF

Ascent+ facility
imec

Platform Technologies

• Disruptive Devices
• Advanced Integration

Key Enabling Capability

• Devices / Test structures
• Processing

Typical Applications

• High frequency power converters
• Analog functions, protection circuits → Monolithic buck convertors
• Diagnostic and protection circuits → Undervoltage lock-out, over-temperature protection, over-current-protection

Publication
[DOI: 10.1109/IEDM19573.2019.8993572]