Description
GaN Power HEMT Discrete Device
Among the wide band gap (WBG) components, GaN HEMT devices are gaining more attention due to its intrinsic benefits such as high switching speed, high breakdown voltage, high thermal conductivity, and low on-resistance. These devices offer a great advantage in downsizing the power electronics circuits. Imec has a platform available for processing state-of-the art discrete p-GaN power switches, and beyond state-of-the-art co-integrated power switches. Discrete p-GaN gate power switches are fabricated on GaN-on-SOI technology. Our p-GaN technology is offering comparable performance to available industrial alternatives. Datasheet of the 36mm power device is shown below.
Available in bare die
Keywords
GaN, HEMT, WBG device
Specifications
Datasheet of imec 36mm reference power HEMT
| Symbol | Description | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| BVDS | Drain-Source voltage | 200 | V | |||
| ID | Pulsed Drain Current | 1 ms pulse | 10 | A | ||
| VGS | Gate-Source voltage | 7 | V | |||
| On/Off state characteristics | ||||||
| BVDS | Drain-Source voltage | VGS=0V, ID=1µA/mm | 200 | V | ||
| IDSS | Drain-Source leakage | VGS=0V, VDS=200V | 0.5 | µA | ||
| IGSS | Gate-Source leakage | VGS=0V, VDS=200V | 0.27 | µA | ||
| RDS-ON | Drain-Source ON resistance | VGS=7V, ID=2A | 0.16 | Ω | ||
| VTH | Gate-Source voltage | maximum gm | 2.3 | V | ||
| VDS=0.1V, ID=10µA/mm | 1.3 | V | ||||
| Dynamic Characteristics | ||||||
| CISS | Input capacitance | VGS=3 VDS=200V f=1MHz |
55 | pF | ||
| COSS | Output capacitance | 35 | pF | |||
| CRSS | Reverse transfer capacitance | 0.97 | pF | |||
Ascent+ facility
imec
Platform Technology
- Disruptive Devices
Key Enabling Capability
- Devices / Test structures
Typical Applications
Use in power switching applications. Suitable for high frequency high power application.
Publication
[DOI: 10.1109/IEDM19573.2019.8993572]
