Description
Tyndall FlexiFab
Range of cleanrooms designed for flexible process & product development
- Silicon MOS Fabrication
- MEMS Fabrication
- Compound Semiconductor Fabrication
- Photonics Fab Training Facility
- e-Beam Lithography
- Non-standard nano-processing
Specifications
- Lithography
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- Photo and e-beam lithography
- Metal/dielectric deposition
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- e-beam evaporation
- Temescal FC2000: Metals. 5mm pieces to 100mm wafers. Rate: 0.1Å/s to 20Å/s
- Temescal/Ferotec UFC4900: Metals. 5mm pieces to 200mm wafers. Rate: 0.2Å/s to 50Å/s
- Oxford PVD: Metals. 100mm wafers
- Leybold SyrusPRO 720: dielectric coater. 5mm pieces to 100mm wafers. Rate: 0.1Å/s to 20Å/s
- Sputtering
- Nordiko 2500: ∅4″ substrates. Up to 12 wafers. Substrate bias (RF & DC). Process gases: Ar, N2
- Lesker Sputterer: ∅4″ or ∅6″ substrates. Substrate bias (RF & DC). Substrate heater (up to 500°C). Process gases: Ar, O2, N2
- PECVD
- STS PECVD: ∅4” substrates. 300°C. Applications Films: SiO2, Si3N4, low-stress Si3N3
- Electroplating: Digital Matrix Copper Plating
- e-beam evaporation
- Etching
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- Oxford ICP plasma etcher for thin film III-V materials, GaAs, InP and ternary alloys, GaN, AlN and ITO using Cl-based chemistry
- Synapse Plasma etcher for thin film dielectric materials, SiO2, Si3N4, SiC and BCB using F- based chemistry
- Other
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- Wafer bonding
- Wafer cleaning
Ascent+ facility
Tyndall
Platform Technologies
- Nano for Quantum Technologies
- Disruptive Devices
- Advanced Integration
Key Enabling Capability
- Processing
Typical Applications
Examples of nanoelectronic devices and test structures fabricated at FlexiFab
- Integration of new materials, device and subsystem concepts
- Nanoelectronics, nanophotonics, nanobiotechnology
- Devices, sensors and NEMS
- e-beam for nanowire patterning – sub 10nm dimensions
- Technologies for 2D contacting to nano-scale structures
- e-beam contacting on flakes: Graphene, transition metal dichalcogenides (TMD) monolayers (e.g. MoS2)
- Metal contact tracks enabled using the electron beam or FIB (Focused ion beam) milling – allows customization of nanowire structures at dimensions of 10nm