FlexiFab Clean Room

Description

Tyndall FlexiFab

Range of cleanrooms designed for flexible process & product development

Specifications

Lithography

Metal/dielectric deposition

e-beam evaporation
- Temescal FC2000: Metals. 5mm pieces to 100mm wafers. Rate: 0.1Å/s to 20Å/s
- Temescal/Ferotec UFC4900: Metals. 5mm pieces to 200mm wafers. Rate: 0.2Å/s to 50Å/s
- Oxford PVD: Metals. 100mm wafers
- Leybold SyrusPRO 720: dielectric coater. 5mm pieces to 100mm wafers. Rate: 0.1Å/s to 20Å/s
Sputtering
- Nordiko 2500: ∅4″ substrates. Up to 12 wafers. Substrate bias (RF & DC). Process gases: Ar, N₂
- Lesker Sputterer: ∅4″ or ∅6″ substrates. Substrate bias (RF & DC). Substrate heater (up to 500°C). Process gases: Ar, O₂, N₂
PECVD
- STS PECVD: ∅4” substrates. 300°C. Applications Films: SiO₂, Si₃N₄, low-stress Si₃N₃
Electroplating: Digital Matrix Copper Plating

Etching

Oxford ICP plasma etcher for thin film III-V materials, GaAs, InP and ternary alloys, GaN, AlN and ITO using Cl-based chemistry
Synapse Plasma etcher for thin film dielectric materials, SiO₂, Si₃N₄, SiC and BCB using F- based chemistry

Other

Ascent+ facility
Tyndall

Platform Technologies

Key Enabling Capability

Typical Applications
Examples of nanoelectronic devices and test structures fabricated at FlexiFab

Integration of new materials, device and subsystem concepts
Nanoelectronics, nanophotonics, nanobiotechnology
Devices, sensors and NEMS
e-beam for nanowire patterning – sub 10nm dimensions
Technologies for 2D contacting to nano-scale structures
e-beam contacting on flakes: Graphene, transition metal dichalcogenides (TMD) monolayers (e.g. MoS₂)
Metal contact tracks enabled using the electron beam or FIB (Focused ion beam) milling – allows customization of nanowire structures at dimensions of 10nm