e-beam Lithography Platform

Description

Lithography platform: Nanostructuring with Electron beam lithography Ebeam and reactive ion etching RIE

• Direct maskless patterning
• Realization of customer specific patterning from sketch to etch for fabrication of test structures for technology development and specific integrated circuits/ASICs
• Design tests of innovative devices and cell concepts and their variation on a wafer (Chip Shuttle)
• Nanoimprint masters and calibration pattern for metrology development
• MEMS and NEMS patterning with productive quality
• “Mix & Match” with optical exposure techniques
• Optical gratings and light modulation devices
• Correction of design or process errors in finalized CMOS structures (Metal Fix)
• High aspect ratio patterning (TSV, 3D capacitors)
• Structuring without optical diffraction limit below 40nm (half pitch)
• Exposure of various designs or layout variations on single wafer with mix & match alignment capability
• Different etch capabilities (e.g. ICP, CCP, high-T, MW)
  • Standard materials: Substrate Si, poly-Si, amorphous Si
  • Hard mask materials: SiN, SiO₂
  • Metal gate materials: TiN, TaN, W, WSi
  • High-k Materials (at 250°C): Al₂O₃, HfO₂ , SiHfO_x, ZrO₂
  • Metal: Al, AlSi

For more information, click here: E-Beam2017_v3.indd (fraunhofer.de)

---

Specifications
The e-beam lithography platform includes:

• ebeam – Vistec SB3050DW – Wafer sizes: 4″, 6″, 8″ & 12
• TEL ACT 12 – Fully automated 12“ resist coating and Developing
• Lab coater – Brewer Science CEE 100 & 200 FX – Wafer sizes: 4″, 6″, 8″ & 12″
• CD-SEM – AMAT Verity 4i – Wafer sizes: 8″ & 12″
• Optical inspection – Leica INS3300 – Wafer sizes: 8″ & 12″
• Etching: Applied Material Centura Mainframes for 12″ Wafer (BEOL and FEOL)
• ICP/CCP reactor with active OES endpoint detection

Ascent+ facility
Fraunhofer IPMS-CNT

Platform Technologies

• Nano for Quantum Technologies
• Disruptive Devices

Key Enabling Capability

• Processing

Case Study

Fraunhofer offers research and development to partners who do not have their own manufacturing possibilities. The IPMS lithography platform enables users to obtain individual or established structures on wafers for own further usage in R&D and industry. The metrology capabilities (with CD-SEM) open wide range of applications and collaborations with the institutions, which require precise analysis and imaging of the nanostructures down to 40 nm and below.

Publications
[DOI: 10.1117/12.2534642]
[DOI: 10.1109/ASMC49169.2020.9185250]