Diamond Etching

Diamond Etching

Performance of lithographic definition of mask layout in lateral resolution below the micron range. Subsequent dry chemical Oxygen based inductively coupled plasma (ICP) etching.



Dry chemical diamond structuring

  • mm size substrates are temporarily bonded to carrier wafers for clean room processing
  • optical or electron-beam direct write lithography defines dielectric or metallic etch mask via lift-off process
  • ICP etching know-how allows for tuning of sidewall geometry and angles. Deep etches beyond 50µm possible as well as free-standing nanostructures


Electron-Beam Lithography
Jeol 9500FS tool
100keV, 1mm main field, 4″ Wafer writing
Optical Lithography
Süss MA6 mask aligner, DWL66+ Heidelberg instruments laser direct writer
365nm (i-line) and 405nm (h-line), <5µm lateral resolution, mask-less direct writing, rapid prototyping, positive and negative resist processes including image-reversal and lift-off

Ascent+ facility
Fraunhofer IAF

Platform Technologies

  • Nano for Quantum Technologies

Key Enabling Capability

  • Processing

Typical Application
Diamond NV quantum devices

[DOI: 10.1557/adv.2020.147]

Additional information

Key Enabling Capability


Platform Technology

Nano for Quantum Technologies


Fraunhofer Mikroelektronik