Description
Dry chemical diamond structuring
- mm size substrates are temporarily bonded to carrier wafers for clean room processing
- optical or electron-beam direct write lithography defines dielectric or metallic etch mask via lift-off process
- ICP etching know-how allows for tuning of sidewall geometry and angles. Deep etches beyond 50µm possible as well as free-standing nanostructures
Specifications
- Electron-Beam Lithography
- Jeol 9500FS tool
100keV, 1mm main field, 4″ Wafer writing - Optical Lithography
- Süss MA6 mask aligner, DWL66+ Heidelberg instruments laser direct writer
365nm (i-line) and 405nm (h-line), <5µm lateral resolution, mask-less direct writing, rapid prototyping, positive and negative resist processes including image-reversal and lift-off
Ascent+ facility
Fraunhofer IAF
Platform Technologies
- Nano for Quantum Technologies
Key Enabling Capability
- Processing
Typical Application
Diamond NV quantum devices
Publication
[DOI: 10.1557/adv.2020.147]
