Diamond Etching

Performance of lithographic definition of mask layout in lateral resolution below the micron range. Subsequent dry chemical Oxygen based inductively coupled plasma (ICP) etching.

Category:

Dry chemical diamond structuring

  • mm size substrates are temporarily bonded to carrier wafers for clean room processing
  • optical or electron-beam direct write lithography defines dielectric or metallic etch mask via lift-off process
  • ICP etching know-how allows for tuning of sidewall geometry and angles. Deep etches beyond 50µm possible as well as free-standing nanostructures


Specifications

Electron-Beam Lithography
Jeol9500FS tool
100keV, 1mm main field, 4″ Wafer writing
Optical Lithography
Süss MA6 mask aligner, DWL66+ Heidelberg instruments laser direct writer
365nm (i-line) and 405nm (h-line), <5µm lateral resolution, mask-less direct writing, rapid prototyping, positive and negative resist processes including image-reversal and lift-off

Ascent+ facility
Fraunhofer IAF

Platform Technologies

  • Nano for Quantum Technologies
  • Disruptive Devices
  • Advanced Integration

Key Enabling Technologies

  • Processing

Typical Application
Diamond NV quantum devices

Publication
[DOI: 10.1557/adv.2020.147]

Key Enabling Capability

Processing

Platform Technology

Advanced Integration, Disruptive Devices, Nano for Quantum Technologies

Facility

Fraunhofer Mikroelektronik