The Inductively Coupled Plasma (ICP) Etching chamber is designed to achieve high plasma densities using a two RF Generators – one for plasma generation and one for Ion acceleration towards the wafer.
The tool is capable to etch 100mm and 150mm wafers. Hardmask like electroplated Nickel and Copper can be used as masking material. For shallow trench etching, PECVD Silicon dioxide can be used as a mask with a selectivity of up to 2:1. SiC Vias with a depth of >200µm and cavities of over 300µm can be achieved.
- Etch rate up to 4µm/min
- Selectivity to Ni or Cu: over 30:1
- Selectivity to SiO2: 2:1
- Uniformity for shallow trench etching: <2%
- Nano for Quantum Technologies
- Disruptive Devices
Key Enabling Capability
3D structuring of SiC for vias, membranes, recesses, etc.