Deep SiC Etching

Deep SiC Etching

Reactive Ion Etching ICP Chamber capable to etching SiC wafer with high etch rates of several µm per minute and over 300µm deep.



The Inductively Coupled Plasma (ICP) Etching chamber is designed to achieve high plasma densities using a two RF Generators – one for plasma generation and one for Ion acceleration towards the wafer.

The tool is capable to etch 100mm and 150mm wafers. Hardmask like electroplated Nickel and Copper can be used as masking material. For shallow trench etching, PECVD Silicon dioxide can be used as a mask with a selectivity of up to 2:1. SiC Vias with a depth of >200µm and cavities of over 300µm can be achieved.


  • Etch rate up to 4µm/min
  • Selectivity to Ni or Cu: over 30:1
  • Selectivity to SiO2: 2:1
  • Uniformity for shallow trench etching: <2%

Ascent+ facility

Platform Technologies

  • Nano for Quantum Technologies
  • Disruptive Devices

Key Enabling Capability

  • Processing

Case Study

3D structuring of SiC for vias, membranes, recesses, etc.

Additional information

Key Enabling Capability


Platform Technology

Disruptive Devices, Nano for Quantum Technologies


Fraunhofer Mikroelektronik