Deep SiC Etching

Reactive Ion Etching ICP Chamber capable to etching SiC wafer with high etch rates of several µm per minute and over 300µm deep.

Category:

The IPC Etching chamber is designed to achieve high plasma densities using a two RF Generators – one for plasma generation and one for Ion acceleration towards the wafer.

The tool is capable to etch 100mm and 150mm wafers. Hardmask like electroplated Nickel and Copper can be used as masking material. For shallow trench etching, PECVD Silicon dioxide can be used as a mask with a selectivity of up to 2:1. SiC Vias with a depth of >200µm and cavities of over 300µm can be achieved.


Specifications

  • Etch rate up to 4µm/min
  • Selectivity to Ni or Cu: over 30:1
  • Selectivity to SiO2: 2:1
  • Uniformity for shallow trench etching: <2%

Ascent+ facility
Fraunhofer-IZM

Platform Technologies

  • Nano for Quantum Technologies
  • Disruptive Devices
  • Advanced Integration

Key Enabling Technologies

  • Processing

Case Study

3D structuring of SiC for vias, membranes, recesses, etc.

Key Enabling Capability

Processing

Platform Technology

Advanced Integration, Disruptive Devices, Nano for Quantum Technologies

Facility

Fraunhofer Mikroelektronik