Description
- µBump module
- Enabling samples with bumps of either 20µm pitch or 40µm pitch
- Cu pillar module
- Enabling Cu pillars at 100µm pitch with target height of 50µm of Cu
- TSV middle module
- With 5×50 Cu filled TSVs
Specifications
| µBump module | |||
|---|---|---|---|
 |
Rule Description |
Value [µm] | |
| ∅top | ∅bottom | ||
| Bump pitch | 40, 20 | ||
| Bump diameter | 7.5 | 12.5 | |
| Bump material | Cu/Ni/Sn | Cu | |
| Material Thickness | 5/1/3.5 | 5 | |
| Cu Pillar module | ||
|---|---|---|
 |
Rule Description |
Value [µm] |
| Pillar pitch | 100 | |
| Pillar diameter | ∅ 50 | |
| Pillar material | Cu | |
| Material Thickness | 50 | |
| TSV module | ||
|---|---|---|
 |
Rule Description |
Value [µm] |
| TSV diameter | 5 | |
| TSV depth | 50 | |
| TSV fill material | Cu | |
| TSV barrier material | TaNTa | |
| TSV seed material | Cu | |
Ascent+ facility
imec
Platform Technologies
- Advanced Integration
Key Enabling Capability
- Processing
Case Study
Access to the specific modules to enable users to characterise their designs related to the individual module. Can enable electrical, morphological or failure analysis of specific concepts.
Basic processing of a limited number of steps, including in-line metrology allowing further work to be done on the wafers by the user.
