The following data is available to registered users:

  • Graphene FET electrical characterisation data (INL)
  • Leti-NSP Model: SPICE Model for 3D MOSFETS
  • Transistor and test structure specifications
  • Process design kits (PDK)
  • Electrical characterisation data
  • Characterisation and test data provided by ASCENT users
  • FinFET and GAA Data (imec)

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Graphene FET electrical characterisation data (INL)

Representative transconductance and Y-function data for GFETs in a bottom-gate configuration, chip 13.292 produced by INL. The Y-function methodology was used to determine mobility values (assuming oxide thickness of 70 nm), as described in:
G. Ghibaudo, “New method for the extraction of MOSFET parameters”, Electronics Letters 24(9), 543–545 (1988), DOI: 10.1049/el:19880369

  
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Test chips Documentation and Data (imec)

FinFET and GAA test chip documentation and DATA
  • Documentation of process assumptions for the test chips
  • Inventory of test structure types available on the test chips
  • Access to test structures data
PLANAR test chip documentation and DATA
  • Documentation of process assumptions for the test chips
  • Inventory of test structure types available on the test chips
  • Access to test structures data