The following data is available to registered users:
- Graphene FET electrical characterisation data (INL)
- Leti-NSP Model: SPICE Model for 3D MOSFETS
- Transistor and test structure specifications
- Process design kits (PDK)
- Electrical characterisation data
- Characterisation and test data provided by ASCENT users
- FinFET and GAA Data (imec)
To access this data, first you must register by filling the Enquiry Form.
Graphene FET electrical characterisation data (INL)
Representative transconductance and Y-function data for GFETs in a bottom-gate configuration, chip 13.292 produced by INL. The Y-function methodology was used to determine mobility values (assuming oxide thickness of 70 nm), as described in:
G. Ghibaudo, “New method for the extraction of MOSFET parameters”, Electronics Letters 24(9), 543–545 (1988), DOI: 10.1049/el:19880369
Test chips Documentation and Data (imec)
- FinFET and GAA test chip documentation and DATA
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- Documentation of process assumptions for the test chips
- Inventory of test structure types available on the test chips
- Access to test structures data
- PLANAR test chip documentation and DATA
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- Documentation of process assumptions for the test chips
- Inventory of test structure types available on the test chips
- Access to test structures data
