ASCENT White Paper
An Exploration of Contamination Types and Contamination Control Techniques Currently used in the Fabrication of Nanoelectronics
To get your own Open Access copy, please contact Paul Roseingrave:
Paul Roseingrave
ASCENT Access Coordinator
Tyndall National Institute
University College Cork
Lee Maltings complex, Dyke Parade
Cork City, T12 R5CP (IRELAND)
Ph. no.: +353 21 234 6268
e-mail: paul.roseingrave (at) tyndall.ie
Table of Contents
- 1 – Types of Contamination
- 1.1 – Particles – Organic/Inorganic
- 1.2 – Metals
- 1.3 – Airborne Molecular Contamination – AMC
- 2 – Baseline Contamination Levels
- 2.1 – Front End Processes (ITRS 2013)
- 2.2 – Contamination limits for Image Sensors
- 2.3 – Metallic contamination of UPW
- 2.4 – Organic contamination of UPW
- 2.5 – Particle contamination of UPW
- 2.6 – Liquid Chemicals, Bulk and Specialty Gases
- 2.7 – Cleanroom and AMC
- 3 – Contamination Control
- 3.1 – Detection of Material on a Wafer Surfaces
- 3.1.1 – TXRF & III-V Materials
- 3.2 – Detection of Electrical Active Defects in Wafers and Devices
- 3.2.1 – On Wafer Surfaces
- 3.2.2 – Electrical Test Structures
- 3.1 – Detection of Material on a Wafer Surfaces
- 4 – Control Techniques and Strategies
- 4.1 – Wafer Cleaning
- 4.2 – Material Assessment
- 4.3 – Protocols
- 4.4 – Wafer Processing
- 5 – Detection & Analysis Techniques
- 5.1 – TXRF (Total X-ray Fluorescence)
- 5.2 – ICP-MS (Inductively Coupled Plasma Mass Spectrometry)
- 5.3 – SIMS/D-SIMS/TOF-SIMS (Secondary Ion Mass Spectrometry)
- 5.4 – SPV (Surface PhotoVoltage)
- 5.5 – µPCD (Microwave Photoconductive Decay)
- 5.6 – DLTS (Deep Level Transient Spectroscopy)
- 5.7 – Detection Limits
- 6 – Aspects for Scaling
- 6.1 – Contamination/Quality Control
- 6.2 – Continued Scaling
- 6.3 – Future Considerations
- Glossary
- Bibliography