ASCENT+

White Paper

ASCENT White Paper

An Exploration of Contamination Types and Contamination Control Techniques Currently used in the Fabrication of Nanoelectronics

To get your own Open Access copy, please contact us:

ASCENT+ Access Team
Tyndall National Institute
University College Cork
Lee Maltings complex, Dyke Parade
Cork City, T12 R5CP (IRELAND)
e-mail: ascent (at) ascent.network

Table of Contents

  • 1 – Types of Contamination
    • 1.1 – Particles – Organic/Inorganic
    • 1.2 – Metals
    • 1.3 – Airborne Molecular Contamination – AMC
  • 2 – Baseline Contamination Levels
    • 2.1 – Front End Processes (ITRS 2013)
    • 2.2 – Contamination limits for Image Sensors
    • 2.3 – Metallic contamination of UPW
    • 2.4 – Organic contamination of UPW
    • 2.5 – Particle contamination of UPW
    • 2.6 – Liquid Chemicals, Bulk and Specialty Gases
    • 2.7 – Cleanroom and AMC
  • 3 – Contamination Control
    • 3.1 – Detection of Material on a Wafer Surfaces
      • 3.1.1 – TXRF & III-V Materials
    • 3.2 – Detection of Electrical Active Defects in Wafers and Devices
      • 3.2.1 – On Wafer Surfaces
      • 3.2.2 – Electrical Test Structures
  • 4 – Control Techniques and Strategies
    • 4.1 – Wafer Cleaning
    • 4.2 – Material Assessment
    • 4.3 – Protocols
    • 4.4 – Wafer Processing
  • 5 – Detection & Analysis Techniques
    • 5.1 – TXRF (Total X-ray Fluorescence)
    • 5.2 – ICP-MS (Inductively Coupled Plasma Mass Spectrometry)
    • 5.3 – SIMS/D-SIMS/TOF-SIMS (Secondary Ion Mass Spectrometry)
    • 5.4 – SPV (Surface PhotoVoltage)
    • 5.5 – µPCD (Microwave Photoconductive Decay)
    • 5.6 – DLTS (Deep Level Transient Spectroscopy)
    • 5.7 – Detection Limits
  • 6 – Aspects for Scaling
    • 6.1 – Contamination/Quality Control
    • 6.2 – Continued Scaling
    • 6.3 – Future Considerations
  • Glossary
  • Bibliography