The following table shows the basic characteristics of the ASCENT+ facilities of the different ASCENT+ Access Providers
| General | Technology | Logistics | Quality | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Partner | Name of facility | Type of facility | Cleanroom size approx [m2] | Substrate type(s) | Type of unit processes available | Typical minimum size of features | Type of MES | Type of masks for litho / type of data files for ebeam | Typical size of processing lots | Operation times | Single wafer processing | Cleanroom class [ISO 14644-1] | Certification | Process for deviation protocols | Critical materials allowed | Critical materials forbidden |
| CEA-Leti | LETI CMOS | 200 mm (CMOS) | 3000 | Si, SOI, Glass | litho, deposition (PVD, CVD), etch (dry/wet), implant, thermal, CMP, Grinding, Bonding, clean, in-line metrology, defect density inspection, contamination control | DUV-litho: 200nm Ebeam 40nm | Eyelit Wafer tracking | Chrome on glass / 4× | Varies, max 25 | 24/6 | Y | ISO 4 | ISO 9001 | Y | Cu at BEOL | Au, Pt, … |
| CEA-Leti | LETI MEMS | 200 mm MEMS | 5000 | Si,InP, Glass, III-V | litho, deposition (PVD, CVD), etch (dry/wet), implant, thermal, CMP, Grinding, Bonding, clean, in-line metrology, defect density inspection, contamination control | DUV-litho: 500nm | Eyelit Wafer tracking | Chrome on glass / 5×, Quartz | Varies, max 25 | 24/6 | Y | ISO 5 | ISO 9002 | Y | Au, Pt | |
| CEA-Leti | LETI 300mm | 300 mm | 3000 | Si,SOI, Glass | litho, deposition (PVD, CVD), etch (dry/wet), implant, thermal, CMP, Grinding, Bonding, clean, in-line metrology, defect density inspection, contamination control | DUV immersion litho: 40nm | Eyelit Wafer tracking | Chrome on glass / 4× | Varies, max 25 | 24/6 | Y | ISO 5 | ISO 9003 | Y | Cu at BEOL and Au at very end of flow | Au, Pt, … |
| FhG | IAF | ≤100 mm compound | 1000 | GaN-on Si and compound | litho, deposition (PVD, CVD), electroplating, etch (dry/wet), thermal, clean, CMP, in-line metrology, defect density inspection | e-beam: 30nm | Old: self programmed New: Critical Manufacturing | Chrome on glass/ gds | 5 | 8/5 | Y | ISO3/4 | ISO9001 | Y | Y | |
| FhG | IISB Si | ≤200 mm | 1500 (Si- and SiC-line) | Si | litho, deposition (PVD, CVD), etch (dry/wet), implant, thermal, laser anneal, clean, in-line metrology, defect density inspection, contamination control, backside grinding, electrical characterisation (up to 500°C) | 800nm | Critical Manufacturing | Chrome on glass | ≤25 | 10/5 | Y | ISO4 | ISO9001 | Y | Partly, e.g. Pt | Cu, Au |
| FhG | IISB SiC | ≤150mm | 1500 (Si- and SiC-line) | SiC | litho, deposition (PVD, CVD), etch (dry/wet), implant, thermal, laser anneal, clean, in-line metrology, defect density inspection, contamination control, backside grinding, electrical characterisation (up to 500°C) | 800nm | Critical Manufacturing | Chrome on glass | ≤25 | 10/5 | Y | ISO4 | ISO9001 | Y | partly, e.g. Pt | Cu, Au |
| FhG | IPMS CNT | 300mm | 3000 | Si | all, but implant | e-beam Litho:30nm otherwise 45nm | Critical Manufacturing | ebeam: JES-files | 25 | Y | ISO6 | ISO9001 | Y (A&E) | Cu et BEOL(CL3); MRAM Materials at CL5 (Fe, B, Mg, Ru, Pt) | Au, Ag | |
| FhG | IPMS MEMS | 200mm | 1500 | Si | PVD, CVD, ALD, inline metrology, defct inspection, CMP, HT processes, Oxide/metal/Si etch, gas phase release, variety of litho, wet etch and cleaning | 130nm | Critical Manufacturing | Chrome on glass | 6- 25 | 24/5 | Y | ISO4 | ISO9001 | Y | CMOS compatible, secured Cu allowed | Au, Ag |
| FhG | IZM (Berlin) | 75-200mm | 800 | Si, Glass, Polymer | Litho (Mask Aligner, LDI), deposition (PVD), electroplating (Cu, Au, In, solder), bump metrology, wafer test, surface planer, RIE, ion etching, Si and SiC etch for TSV and sensors, wafer bonding, chip to wafer bonding, CMP, grinding, dicing | Broadband 1.5µm, LDI 0.7µm | Critical Manufacturing | Chrome on glass GDSII, LDI | Up to 25 | 10/5 | Y | ISO 4-6 | ISO 9001 | Y | Y | |
| FhG | IZM (Dresden) | 200-300mm | 900 | Si, Glass | Litho (Mask Aligner, LDI), deposition (PVD), electroplating (Cu, solder), bump metrology, wafer test, RIE, Si etch for TSV and sensors, wafer bonding, CMP, grinding, dicing (mechanical, stealth, laser) | Broadband 2µm, LDI 0.7µm | Critical Manufacturing | Chrome on glass GDSII, LDI | Up to 25 | 10/5 | Y | ISO 4-6 | ISO 9001 | Y | Y | |
| imec | fab1 – GaN lab | 200mm CMOS | 5200 | Si | litho, deposition (PVD, CVD), etch (dry/wet), implant, thermal, clean, … | 130nm | prototyping / low-volume manufacturing | ebeam and optical litho | 20 | 24/7 | Y | 1000 | Cu at BEOL; all material in labs | |||
| imec | fab2 – Pline | 300mm CMOS | 7200 | Si | litho, deposition (PVD, CVD), etch (dry/wet), implant, thermal, clean, … | 65nm, 28nm, 16nm, 7nm | Critical Manufacturing | optical litho | 20 | 24/7 | Y | 1000 | Cu at BEOL | Au, Ag | ||
| INL | INL Micro and Nanofabrication Facility | 200mm Non-CMOS | 700 | 200mm and pieces Si | litho, deposition (PVD, CVD), etch (dry/wet), CNT CVD, graphene dep, XeF2, HF Vapour Etch, DRIE, CMP, dicing, wire bonding, SEM, in-process metrology | 10nm | myfabLIMS | Chrome on glass Formats: GDS,LEDB,OASIS,CIF,DXF,generic Bitmap files | Varies, max 25 | 5 days | Y/N | ISO6/ISO5(litho) | ISO9001 ISO 13485 | Y | CMOS/non-CMOS | Pb |
| Tyndall | Tyndall-CMOS | 100mm/200mm CMOS | 250 | Si-CMOS | litho, deposition (PVD, CVD), etch (dry/wet), implant, thermal, clean, ALD | 1µm | Casper wafer-tracking software | Chrome on glass | Varies, max 25 | 5 days | Y | ISO6/ISO4(litho) | ISO9001 | Y | CMOS only | Au,Cu,Ni,Fe,Pb |
| Tyndall | Tyndall-CompoundSemi | 100mm/200mm | 750 | 100mm/200mm/pieces III-V | litho, deposition (PVD, CVD), etch (dry/wet) thermal, clean, ALD | DUV-litho: 750nm | LIMS | Chrome on glass / Quartz(DUV) | Varies | 5 days | Y | ISO7/ISO5(litho) | ISO9001 | Y | III-V materials | Cu,Pb |
| Tyndall | Tyndall-Ebeam | 100mm/200mm CMOS/Non-CMOS | 52 | 100mm/200mm/pieces Si/III-V | Lithography | 10nm | Casper wafer-tracking software | GDS,LEDB,OASIS,CIF,DXF,generic Bitmap files | Varies | 5 days | Y | ISO7/ISO5(litho) | ISO9001 | Y | CMOS/non-CMOS | Pb |
| Tyndall | Tyndall-MEMS | 100mm/200mm | 750 | Si/Glass | litho, deposition (PVD, CVD), etch (dry/wet), clean, anodic Bonding, XeF2, HF Vapour etch | 1µm | Casper wafer-tracking software | Chrome on glass | Varies, max 25 | 5 days | Y | ISO7/ISO5(litho) | ISO9001 | Y | Cu,Ni,Fe | Au,Pb |