P. Schüffelgen; D. Rosenbach; E. Neumann; M.P. Stehno; M. Lanius; J. Zhao; M. Wang; B. Sheehan; M. Schmidt; B. Gao; A. Brinkman, “Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films”, Journal of Crystal Growth …
DOI: 10.1016/j.jcrysgro.2017.03.035

ASCENT Project RefNo 050

J. Muñoz-Gorriz; S. Monaghan; K. Cherkaoui; J. Suñé; P.K. Hurley; E. Miranda, “Spatial analysis of failure sites in large area MIM capacitors using wavelets”, Microelectronic Engineering, vol 178, pp. 10-6
DOI: 10.1016/j.mee.2017.04.011

ASCENT Project RefNo 030

A. Rodriguez-Fernandez; S. Monaghan; J. Suñé; P.K. Hurley; X. Aymerich; E. Miranda, “Nonhomogeneous Generation of Filamentary Paths in High-K Oxide Films Caused by Localized Electrical Stress”, International Workshop on Oxide Electronics, October 2016, Nanjing, China

ASCENT Project RefNo 030

J. Muñoz-Gorriz; S. Monaghan; K. Cherkaoui; J. Suñé; P.K. Hurley; E. Miranda, “Exploring the Breakdown Spot Spatial Distribution in Metal-Insulator-Metal Capacitors Using the Wavelets Method”, DRIP XVII, 17th Conference on defects-recognition, imaging and physics in semiconductors, October 2017, Valladolid, Spain

ASCENT Project RefNo 030

T. Karatsori; C. Theodorou; R. Lavieville; T. Chiarella; J. Mitard; N. Horiguchi; C.A. Dimitriadis; G. Ghibaudo, “Statistical Characterization and Modeling of Drain Current Local and Global Variability in 14nm Bulk FinFETs”, 30th IEEE International Conference on Microelectronic Test Structures (ICMTS), Grenoble (France), 27-30 March 2017, pp. 49-53
DOI: 10.1109/ICMTS.2017.7954263

ASCENT Project RefNo 011
ASCENT Project RefNo 036

M. Karner; O. Baumgartner; Z. Stanojević; F. Schanovsky; G. Strof; C. Kernstock; H. W. Karner; G. Rzepa; T. Grasset, “Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations”, IEEE International Electron Devices Meeting (IEDM), San Francisco (USA), 3-7 Dec 2016, pp. 30.7.1-4
DOI: 10.1109/IEDM.2016.7838516

ASCENT Project RefNo 043

Ye, Liang, “Molecular monolayers for doping silicon: from doping dose control to device applications”, PhD thesis, Chapter 6, pp. 77-90; Univ. of Twente, ISBN 978.90.365.4149-7
DOI: 10.3990/1.9789036541497 (Open Access)
Univ Twente Repository

ASCENT Project RefNo 029