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User testimonial: Prof. Alexei Nazarov from the Lashkaryov Institute of Semiconductor Physics (Kiev, Ukraine) applies low-temperature plasma annealing (not more 250°C) to new types of semiconductor MOS devices such as junctionless III-V MISFET which are very sensitive to high-temperature processing. Tyndall provided fabricated devices and advanced electrical characterization facilities. Watch Alexei’s story:



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